IDT, Integrated Device Technology Inc
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IDT71V2559S85BG8
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IDT71V2559S85BG8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: Ball Grid Array (BGA)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: SRAM
  • Organization: 32M x 8 bits
  • Operating Voltage: 3.3V
  • Access Time: 8.5 ns
  • Standby Current: 10 mA (typical)
  • Package Dimensions: 13mm x 22mm
  • Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V2559S85BG8 has a total of 119 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSSQ
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VDDQ
  20. DQ16
  21. DQ17
  22. DQ18
  23. DQ19
  24. DQ20
  25. DQ21
  26. DQ22
  27. DQ23
  28. VSSQ
  29. DQ24
  30. DQ25
  31. DQ26
  32. DQ27
  33. DQ28
  34. DQ29
  35. DQ30
  36. DQ31
  37. VDDQ
  38. A0
  39. A1
  40. A2
  41. A3
  42. A4
  43. A5
  44. A6
  45. A7
  46. A8
  47. A9
  48. A10
  49. A11
  50. A12
  51. A13
  52. A14
  53. A15
  54. A16
  55. A17
  56. A18
  57. A19
  58. A20
  59. A21
  60. A22
  61. A23
  62. A24
  63. A25
  64. A26
  65. A27
  66. A28
  67. A29
  68. A30
  69. A31
  70. VSS
  71. WE#
  72. CAS#
  73. RAS#
  74. OE#
  75. CKE
  76. CS#
  77. BA0
  78. BA1
  79. VDD
  80. CLK

(Continued...)

Functional Features

  • High-speed operation: The IDT71V2559S85BG8 offers fast access times, making it suitable for applications requiring quick data retrieval.
  • Low-power consumption: It operates at a low standby current, reducing power consumption and extending battery life in portable devices.
  • Synchronous interface: The memory device synchronizes with the system clock, enabling efficient data transfer.
  • Easy integration: The BGA package allows for compact and reliable integration into electronic systems.

Advantages and Disadvantages

Advantages: - Fast access times - Low-power consumption - Synchronous interface for efficient data transfer - Compact and reliable BGA package

Disadvantages: - Limited storage capacity (32M x 8 bits) - Higher cost compared to other memory technologies

Working Principles

The IDT71V2559S85BG8 is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address signals from the system, which specify the location of the data to be accessed. The device then reads or writes the data based on control signals such as CAS#, RAS#, WE#, and OE#. The synchronous interface ensures that data transfers occur in sync with the system clock, enabling efficient communication between the memory and the rest of the system.

Detailed Application Field Plans

The IDT71V2559S85BG8 is commonly used in various applications, including:

  1. Computer systems: Used as cache memory for faster data access.
  2. Networking equipment: Provides high-speed data buffering capabilities.
  3. Telecommunications devices: Enables quick data processing in voice and data communication systems.
  4. Industrial automation: Used for storing critical data in control systems.
  5. Automotive electronics: Provides reliable data storage for automotive applications.

Detailed and Complete Alternative Models

1

技術ソリューションにおける IDT71V2559S85BG8 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V2559S85BG8 in technical solutions:

  1. Q: What is IDT71V2559S85BG8? A: IDT71V2559S85BG8 is a specific model of synchronous static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V2559S85BG8? A: The IDT71V2559S85BG8 has a capacity of 4 Megabytes (32 Megabits) organized as 256K words by 16 bits.

  3. Q: What is the operating voltage range for IDT71V2559S85BG8? A: The operating voltage range for IDT71V2559S85BG8 is typically between 3.0V and 3.6V.

  4. Q: What is the speed rating of IDT71V2559S85BG8? A: The IDT71V2559S85BG8 has a speed rating of 85 nanoseconds (ns), which represents the access time for reading or writing data.

  5. Q: Can IDT71V2559S85BG8 be used in battery-powered devices? A: Yes, IDT71V2559S85BG8 can be used in battery-powered devices as it operates within the typical voltage range of such devices.

  6. Q: Is IDT71V2559S85BG8 compatible with other SRAM chips? A: Yes, IDT71V2559S85BG8 is compatible with other SRAM chips that have similar specifications and interface requirements.

  7. Q: Can IDT71V2559S85BG8 be used in high-speed applications? A: While IDT71V2559S85BG8 has a relatively fast access time, it may not be suitable for extremely high-speed applications due to its 85 ns speed rating.

  8. Q: Does IDT71V2559S85BG8 support simultaneous read and write operations? A: No, IDT71V2559S85BG8 does not support simultaneous read and write operations. It is a synchronous SRAM and follows a specific timing sequence.

  9. Q: Can IDT71V2559S85BG8 be used in industrial temperature environments? A: Yes, IDT71V2559S85BG8 is designed to operate within the industrial temperature range of -40°C to +85°C.

  10. Q: What are some typical applications of IDT71V2559S85BG8? A: IDT71V2559S85BG8 can be used in various applications such as networking equipment, telecommunications systems, industrial control systems, and embedded systems where reliable and fast memory storage is required.

Please note that these answers are general and may vary depending on specific requirements and use cases.