IDT71V2559S85PF

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
Package: 119-Ball Fine-Pitch Ball Grid Array (FBGA)
Essence: Provides high-performance memory storage for various electronic devices
Packaging/Quantity: Available in tape and reel packaging, quantity depends on customer requirements

Specifications

Memory Type: Synchronous SRAM
Density: 32 Megabits (4 Megabytes)
Organization: 2M x 16
Operating Voltage: 3.3V
Access Time: 8.5 ns
Clock Frequency: 117 MHz
Interface: Parallel
Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V2559S85PF has a total of 119 pins. The pin configuration is as follows:

VDDQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
VSSQ
NC
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
VDDQ
DQM0
DQM1
WE#
CAS#
RAS#
OE#
CKE
CLK
VSSQ
NC
VDDQ
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
VSSQ
NC
DM0
DM1
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ
VDDQ
VSSQ

Functional Features

High-speed operation with an access time of 8.5 ns
Low-power consumption for energy-efficient applications
Synchronous interface allows for efficient data transfer
Reliable and stable performance in various operating conditions
Easy integration into electronic devices due to compact package size

Advantages and Disadvantages

Advantages

High-speed operation enables quick data access
Low-power consumption prolongs battery life in portable devices
Synchronous interface ensures efficient data transfer
Compact package size allows for space-saving designs

Disadv

技術ソリューションにおける IDT71V2559S85PF の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V2559S85PF in technical solutions:

Q: What is IDT71V2559S85PF? A: IDT71V2559S85PF is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V2559S85PF? A: The IDT71V2559S85PF has a capacity of 4 Megabits (4Mb) or 512 Kilobytes (512KB).
Q: What is the operating voltage range for IDT71V2559S85PF? A: The operating voltage range for IDT71V2559S85PF is typically between 3.0V and 3.6V.
Q: What is the access time of IDT71V2559S85PF? A: The access time of IDT71V2559S85PF is 8.5 nanoseconds (ns).
Q: Can IDT71V2559S85PF be used in battery-powered devices? A: Yes, IDT71V2559S85PF can be used in battery-powered devices as it operates within the typical voltage range of such devices.
Q: Is IDT71V2559S85PF compatible with different microcontrollers? A: Yes, IDT71V2559S85PF is compatible with various microcontrollers as long as they support the required interface (e.g., parallel or asynchronous).
Q: Can IDT71V2559S85PF be used in industrial applications? A: Yes, IDT71V2559S85PF is suitable for industrial applications as it can withstand extended temperature ranges and has high reliability.
Q: Does IDT71V2559S85PF support burst mode operation? A: No, IDT71V2559S85PF does not support burst mode operation. It is a synchronous SRAM with a fixed access time.
Q: Can IDT71V2559S85PF be used in real-time systems? A: Yes, IDT71V2559S85PF can be used in real-time systems as it provides fast and deterministic access to data.
Q: Are there any specific design considerations when using IDT71V2559S85PF? A: Yes, some design considerations include proper decoupling capacitors, signal integrity, and ensuring the correct voltage levels and timing requirements are met.

Please note that these answers are general and may vary depending on the specific application and requirements.