IDT71V256SA10YG

Product Overview

Category

The IDT71V256SA10YG belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This product is primarily used as a high-speed memory device in various electronic systems and applications.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile storage
• Reliable data retention
• Easy integration into existing circuitry

Package

The IDT71V256SA10YG is available in a compact and industry-standard 44-pin TSOP (Thin Small Outline Package).

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval in electronic devices.

Packaging/Quantity

The IDT71V256SA10YG is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Size: 256 kilobits (32 kilobytes)
• Organization: 32K x 8 bits
• Access Time: 10 nanoseconds
• Operating Voltage: 5 volts
• Standby Current: 50 microamps (maximum)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V256SA10YG has a total of 44 pins, which are assigned specific functions. The pin configuration is as follows:

1. Chip Enable (CE)
2. Output Enable (OE)
3. Write Enable (WE)
4. Address Inputs (A0-A14)
5. Data Inputs/Outputs (DQ0-DQ7)
6. Power Supply (+5V)
7. Ground (GND)

Note: The remaining pins are not listed here for brevity.

Functional Features

• Fast and efficient data access
• Easy interfacing with other electronic components
• Low power consumption in standby mode
• Reliable data retention even during power loss or system shutdown

Advantages and Disadvantages

Advantages

• High-speed operation allows for quick data access and processing.
• Low power consumption helps conserve energy and extend battery life in portable devices.
• Non-volatile storage ensures that data is retained even when the power supply is disconnected.
• Easy integration into existing circuitry simplifies the design and development process.

Disadvantages

• Limited memory capacity compared to other types of memory chips.
• Relatively higher cost per unit compared to alternative memory technologies.
• Susceptible to electromagnetic interference (EMI) due to its high-speed operation.

Working Principles

The IDT71V256SA10YG operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when the power supply is disconnected. The chip utilizes a combination of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V256SA10YG finds applications in various electronic systems, including but not limited to:

1. Computer motherboards
2. Networking equipment
3. Telecommunications devices
4. Industrial control systems
5. Automotive electronics
6. Consumer electronics

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-UI10
2. Micron MT48LC32M8A2P-75:C
3. Cypress CY7C1041DV33-10ZSXI
4. Renesas R1LV0416DSB-5SI#B0
5. Nanya NT5SV16M16CS-5T

These alternative models offer similar functionality and specifications to the IDT71V256SA10YG and can be considered as potential substitutes in various applications.

In conclusion, the IDT71V256SA10YG is a high-speed SRAM chip that provides reliable data storage and retrieval. Its compact package, low power consumption, and easy integration make it suitable for a wide range of electronic systems. While it has certain limitations, such as limited memory capacity and susceptibility to EMI, alternative models are available to meet specific application requirements.