IDT71V3557SA75BQG

Product Overview

Category

The IDT71V3557SA75BQG belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This product is primarily used in electronic devices for storing and retrieving data quickly. It provides high-speed access to data, making it suitable for applications that require fast read and write operations.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile memory
• Reliable performance
• Wide temperature range compatibility

Package

The IDT71V3557SA75BQG is available in a compact Ball Grid Array (BGA) package. This package offers excellent thermal and electrical properties, ensuring efficient heat dissipation and reliable connections.

Essence

The essence of the IDT71V3557SA75BQG lies in its ability to provide fast and reliable data storage and retrieval in electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in quantities of 100 or more.

Specifications

• Memory Size: 4 Megabits (512K x 8)
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Organization: 512K words x 8 bits
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 20 years

Detailed Pin Configuration

The IDT71V3557SA75BQG has a total of 44 pins. Here is a detailed pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. OE#
19. CE#
20. WE#
21. I/O0
22. I/O1
23. I/O2
24. I/O3
25. I/O4
26. I/O5
27. I/O6
28. I/O7
29. GND
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC

Functional Features

• High-speed access: The IDT71V3557SA75BQG offers fast read and write operations, allowing for efficient data processing.
• Low power consumption: This SRAM chip is designed to minimize power consumption, making it suitable for battery-powered devices.
• Non-volatile memory: The stored data remains intact even when the power supply is disconnected, ensuring data integrity.
• Reliable performance: The IDT71V3557SA75BQG provides consistent and reliable performance over an extended period.
• Wide temperature range compatibility: It can operate in a wide temperature range, making it suitable for various environments.

Advantages and Disadvantages

Advantages

• Fast access time
• Low power consumption
• Non-volatile memory
• Reliable performance
• Wide temperature range compatibility

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per bit compared to some alternative memory options

Working Principles

The IDT71V3557SA75BQG operates based on the principles of static random access memory. It uses flip-flops to store and retrieve data. When a read or write operation is initiated, the address lines specify the location in memory, and the data lines transfer the information.

Detailed Application Field Plans

The IDT71V3557SA75BQG finds applications in various electronic devices, including but not limited to: - Computers and servers - Networking equipment - Communication systems - Industrial automation - Medical devices - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the IDT71V3557SA75BQG include: - Micron MT45W8MW16BGX-701 WT - Samsung K6R4016V1D-UI10 - Cypress CY62157EV30LL-45ZSXI

These models offer similar functionality and can be considered as alternatives depending on specific requirements.

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