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IDT71V3558S133BGI

IDT71V3558S133BGI

Product Overview

Category

The IDT71V3558S133BGI belongs to the category of integrated circuits (ICs).

Use

This IC is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

  • High-speed performance
  • Low power consumption
  • Large storage capacity
  • Reliable data retention
  • Compatibility with various systems

Package

The IDT71V3558S133BGI is available in a compact BGA (Ball Grid Array) package.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage and retrieval capabilities for electronic devices.

Packaging/Quantity

The IDT71V3558S133BGI is typically packaged in reels or trays, with a quantity of 1000 units per reel/tray.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 512K words x 8 bits
  • Operating Voltage: 3.3V
  • Access Time: 133 nanoseconds
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: More than 10 years

Detailed Pin Configuration

The IDT71V3558S133BGI has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. /WE
  19. /OE
  20. I/O0
  21. I/O1
  22. I/O2
  23. I/O3
  24. I/O4
  25. I/O5
  26. I/O6
  27. I/O7
  28. GND
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed data access and retrieval
  • Low power consumption during standby mode
  • Easy integration into various electronic systems
  • Reliable data retention even in harsh environments
  • Compatibility with industry-standard memory interfaces

Advantages and Disadvantages

Advantages

  • Fast access time enhances overall system performance
  • Low power consumption prolongs battery life in portable devices
  • Large storage capacity accommodates complex data requirements
  • Reliable data retention ensures data integrity
  • Wide compatibility allows for seamless integration into existing systems

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited scalability beyond the specified storage capacity
  • Sensitivity to electrostatic discharge (ESD) requires proper handling precautions

Working Principles

The IDT71V3558S133BGI operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The IC uses a combination of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V3558S133BGI finds applications in various electronic devices and systems, including but not limited to: - Computer motherboards - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Medical equipment

Detailed and Complete Alternative Models

  1. IDT71V3558S133BGI-8: Similar to the IDT71V3558S133BGI, but with an extended operating temperature range of -40°C to +105°C.
  2. IDT71V3558S133BGI-10: Similar to the IDT71V3558S133BGI, but with a faster access time of 100 nanoseconds.

These alternative models offer similar functionality and characteristics, with slight variations in operating conditions and performance specifications.

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技術ソリューションにおける IDT71V3558S133BGI の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V3558S133BGI in technical solutions:

  1. Q: What is IDT71V3558S133BGI? A: IDT71V3558S133BGI is a synchronous SRAM (Static Random Access Memory) device manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V3558S133BGI? A: The IDT71V3558S133BGI has a capacity of 4 Megabits (4Mb) or 512 Kilobytes (512KB).

  3. Q: What is the operating voltage range for IDT71V3558S133BGI? A: The operating voltage range for IDT71V3558S133BGI is typically between 3.0V and 3.6V.

  4. Q: What is the access time of IDT71V3558S133BGI? A: The access time of IDT71V3558S133BGI is 133 nanoseconds (ns).

  5. Q: What is the package type for IDT71V3558S133BGI? A: IDT71V3558S133BGI is available in a 119-ball BGA (Ball Grid Array) package.

  6. Q: Can IDT71V3558S133BGI be used in industrial applications? A: Yes, IDT71V3558S133BGI is suitable for use in industrial applications due to its wide operating temperature range and robust design.

  7. Q: Does IDT71V3558S133BGI support multiple chip enable signals? A: Yes, IDT71V3558S133BGI supports two chip enable signals (CE1 and CE2) for flexible memory organization.

  8. Q: Can IDT71V3558S133BGI operate in a low-power mode? A: Yes, IDT71V3558S133BGI has a power-down mode that reduces power consumption when the device is not actively accessed.

  9. Q: What is the data retention capability of IDT71V3558S133BGI? A: IDT71V3558S133BGI can retain data for a minimum of 10 years.

  10. Q: Is IDT71V3558S133BGI pin-compatible with other SRAM devices? A: No, IDT71V3558S133BGI has its own unique pin configuration and is not pin-compatible with other SRAM devices.

Please note that these answers are general and may vary depending on the specific datasheet and application requirements.