IDT71V3558S200PFG

Product Overview

Category

The IDT71V3558S200PFG belongs to the category of integrated circuits (ICs).

Use

This product is primarily used in electronic devices for data storage and retrieval purposes.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable operation

Package

The IDT71V3558S200PFG is available in a compact and durable package, designed to protect the integrated circuit from external factors such as moisture and physical damage.

Essence

The essence of the IDT71V3558S200PFG lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Model: IDT71V3558S200PFG
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 2 Megabits (256K x 8)
• Operating Voltage: 3.3V
• Access Time: 20 ns
• Organization: 256K words x 8 bits
• Package Type: Fine-pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The IDT71V3558S200PFG has a total of 48 pins, which are assigned specific functions. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. /WE
19. /OE
20. I/O0
21. I/O1
22. I/O2
23. I/O3
24. I/O4
25. I/O5
26. I/O6
27. I/O7
28. GND
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed data access and retrieval
• Non-volatile storage capability
• Low power consumption
• Easy integration with other electronic components
• Reliable performance in various operating conditions

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Low power consumption
• Reliable operation
• Easy integration with other electronic components

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity

Working Principles

The IDT71V3558S200PFG utilizes static random access memory (SRAM) technology. It stores digital information in a volatile manner, meaning that the stored data is lost when power is removed. The SRAM cells within the IC retain their state as long as power is supplied, allowing for fast and efficient data access.

Detailed Application Field Plans

The IDT71V3558S200PFG finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V3558S200PFI
   • Similar specifications and features as the IDT71V3558S200PFG, but with a different package type (Fine-pitch Thin Small Outline Package)
2. IDT71V3558S200BGI
   • Similar specifications and features as the IDT71V3558S200PFG, but with a different package type (Ball Grid Array)
3. IDT71V3558S200BG
   • Similar specifications and features as the IDT71V3558S200PFG, but with a different package type (Ball Grid Array)

These alternative models provide flexibility in terms of package options while maintaining similar functionality.

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