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IDT71V3558XS133PFG

IDT71V3558XS133PFG

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous SRAM
  • Package: 100-pin TQFP (Thin Quad Flat Package)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: Synchronous Static Random Access Memory (SRAM)
  • Density: 4 Megabits (4Mbit)
  • Organization: 512K words x 8 bits
  • Operating Voltage: 3.3V
  • Access Time: 133 nanoseconds (ns)
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Greater than 10 years
  • Interface: Parallel

Pin Configuration

The IDT71V3558XS133PFG has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. A0
  12. A1
  13. A2
  14. A3
  15. A4
  16. A5
  17. A6
  18. A7
  19. A8
  20. A9
  21. A10
  22. A11
  23. A12
  24. A13
  25. A14
  26. A15
  27. A16
  28. A17
  29. A18
  30. A19
  31. A20
  32. A21
  33. A22
  34. A23
  35. A24
  36. A25
  37. A26
  38. A27
  39. A28
  40. A29
  41. A30
  42. A31
  43. A32
  44. A33
  45. A34
  46. A35
  47. A36
  48. A37
  49. A38
  50. A39
  51. A40
  52. A41
  53. A42
  54. A43
  55. A44
  56. A45
  57. A46
  58. A47
  59. A48
  60. A49
  61. A50
  62. A51
  63. A52
  64. A53
  65. A54
  66. A55
  67. A56
  68. A57
  69. A58
  70. A59
  71. A60
  72. A61
  73. A62
  74. A63
  75. A64
  76. A65
  77. A66
  78. A67
  79. A68
  80. A69
  81. A70
  82. A71
  83. A72
  84. A73
  85. A74
  86. A75
  87. A76
  88. A77
  89. A78
  90. A79
  91. A80
  92. A81
  93. A82
  94. A83
  95. A84
  96. A85
  97. A86
  98. A87
  99. A88
  100. VDDQ

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low-power consumption ensures efficient energy usage.
  • Synchronous design enables synchronized data transfers.
  • Reliable performance with a long data retention period.
  • Easy integration into existing circuit designs.

Advantages and Disadvantages

Advantages: - High-speed operation improves overall system performance. - Low-power consumption reduces energy costs and extends battery life. - Synchronous design simplifies data transfer and synchronization. - Long data retention ensures data integrity over time. - Easy integration into various circuit designs.

Disadvantages: - Limited storage capacity compared to other memory devices. - Higher cost per bit compared to some alternative memory technologies. - Requires careful handling and proper ESD protection during installation.

Working Principles

The IDT71V3558XS133PFG is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address signals from the external system, which are used to select specific memory locations. The data stored in these locations can be read or written based on the control signals provided. The synchronous design ensures that data transfers occur at specific clock cycles, allowing for efficient and reliable communication between the memory device and the system.

Detailed Application Field Plans

The IDT71V355

技術ソリューションにおける IDT71V3558XS133PFG の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V3558XS133PFG in technical solutions:

  1. Question: What is IDT71V3558XS133PFG?
    Answer: IDT71V3558XS133PFG is a specific model of synchronous SRAM (Static Random Access Memory) manufactured by Integrated Device Technology (IDT).

  2. Question: What is the capacity of IDT71V3558XS133PFG?
    Answer: The IDT71V3558XS133PFG has a capacity of 4 Megabits (512K x 8 bits).

  3. Question: What is the operating voltage range for IDT71V3558XS133PFG?
    Answer: The operating voltage range for IDT71V3558XS133PFG is typically between 3.0V and 3.6V.

  4. Question: What is the access time of IDT71V3558XS133PFG?
    Answer: The access time of IDT71V3558XS133PFG is 13.5 ns, which refers to the time it takes to read or write data from/to the memory.

  5. Question: Can IDT71V3558XS133PFG be used in battery-powered devices?
    Answer: Yes, IDT71V3558XS133PFG can be used in battery-powered devices as long as the operating voltage range is within the device's power supply capabilities.

  6. Question: Is IDT71V3558XS133PFG compatible with other memory interfaces?
    Answer: Yes, IDT71V3558XS133PFG is designed to be compatible with industry-standard asynchronous and synchronous memory interfaces.

  7. Question: What are some typical applications of IDT71V3558XS133PFG?
    Answer: IDT71V3558XS133PFG is commonly used in networking equipment, telecommunications systems, industrial automation, and other embedded applications that require high-speed and reliable memory.

  8. Question: Does IDT71V3558XS133PFG support burst mode operation?
    Answer: Yes, IDT71V3558XS133PFG supports burst mode operation, allowing for faster data transfer rates.

  9. Question: Can IDT71V3558XS133PFG be used in temperature-sensitive environments?
    Answer: Yes, IDT71V3558XS133PFG is designed to operate within a wide temperature range, typically from -40°C to +85°C.

  10. Question: Are there any specific design considerations when using IDT71V3558XS133PFG?
    Answer: When designing with IDT71V3558XS133PFG, it is important to consider proper decoupling capacitors, signal integrity, and timing requirements to ensure optimal performance.

Please note that these questions and answers are general and may vary depending on the specific application and requirements.