IDT, Integrated Device Technology Inc
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IDT71V3559S80PF8
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IDT71V3559S80PF8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 80-pin plastic quad flat pack (PQFP)
  • Essence: Provides fast and reliable data storage and retrieval capabilities for various electronic devices
  • Packaging/Quantity: Sold in reels of 250 units

Specifications

  • Memory Type: Synchronous SRAM
  • Density: 256K x 36 bits
  • Operating Voltage: 3.3V
  • Access Time: 8 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Greater than 10 years
  • Package Dimensions: 14mm x 20mm

Pin Configuration

The IDT71V3559S80PF8 has a total of 80 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. DQ19
  22. DQ20
  23. DQ21
  24. DQ22
  25. DQ23
  26. DQ24
  27. DQ25
  28. DQ26
  29. DQ27
  30. DQ28
  31. DQ29
  32. DQ30
  33. DQ31
  34. VSSQ
  35. /WE#
  36. /OE#
  37. A0
  38. A1
  39. A2
  40. A3
  41. A4
  42. A5
  43. A6
  44. A7
  45. A8
  46. A9
  47. A10
  48. A11
  49. A12
  50. A13
  51. A14
  52. A15
  53. A16
  54. A17
  55. A18
  56. A19
  57. A20
  58. A21
  59. A22
  60. A23
  61. A24
  62. A25
  63. A26
  64. A27
  65. A28
  66. A29
  67. A30
  68. A31
  69. VDD
  70. VSS
  71. CLK
  72. CKE
  73. CS#
  74. BA0
  75. BA1
  76. VDDQ
  77. VSSQ
  78. VDD
  79. VSS
  80. NC

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low-power consumption ensures efficient energy usage.
  • Synchronous design enables synchronized data transfers.
  • Reliable performance with error detection and correction capabilities.
  • Easy integration into various electronic systems.

Advantages and Disadvantages

Advantages: - Fast access time improves overall system performance. - Low power consumption extends battery life in portable devices. - Error detection and correction features enhance data integrity. - Wide operating temperature range allows for versatile usage.

Disadvantages: - Relatively high cost compared to other memory technologies. - Limited storage capacity compared to other memory devices. - Requires external clock signal for synchronous operation.

Working Principles

The IDT71V3559S80PF8 operates as a synchronous SRAM, utilizing a clock signal to synchronize data transfers. It stores and retrieves data using an array of memory cells organized in a 256K x 36 configuration. The device is accessed through address lines (A0-A31) and data lines (DQ0-DQ35). Control signals (/WE#, /OE#, CS#, BA0, BA1, CKE) are used to manage read and write operations. The memory operates at a voltage of 3.3V and provides an access time of 8 ns.

Detailed Application Field Plans

The IDT71V3559S80PF8 is widely used in various applications that require high-speed and reliable data storage. Some common application fields include:

  1. Networking equipment: Used in routers, switches, and network servers to store routing tables and buffer data packets.
  2. Telecommunications systems: Employed in base stations, voice gateways, and communication switches for fast data

技術ソリューションにおける IDT71V3559S80PF8 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V3559S80PF8 in technical solutions:

  1. Q: What is the IDT71V3559S80PF8? A: The IDT71V3559S80PF8 is a high-speed, low-power CMOS synchronous static RAM (SRAM) with a capacity of 4 Meg x 18.

  2. Q: What are the key features of the IDT71V3559S80PF8? A: Some key features include a synchronous interface, fast access times, low power consumption, and a wide operating voltage range.

  3. Q: What are some typical applications for the IDT71V3559S80PF8? A: This SRAM is commonly used in networking equipment, telecommunications systems, industrial automation, and other high-performance computing applications.

  4. Q: What is the operating voltage range for the IDT71V3559S80PF8? A: The IDT71V3559S80PF8 operates within a voltage range of 3.0V to 3.6V.

  5. Q: What is the maximum clock frequency supported by the IDT71V3559S80PF8? A: The IDT71V3559S80PF8 supports a maximum clock frequency of 80 MHz.

  6. Q: Does the IDT71V3559S80PF8 support multiple chip enable inputs? A: Yes, this SRAM supports two chip enable inputs (CE1 and CE2) for easy interfacing with other devices.

  7. Q: Can I use the IDT71V3559S80PF8 in a battery-powered device? A: Yes, the IDT71V3559S80PF8 has low power consumption, making it suitable for battery-powered applications.

  8. Q: What is the data retention capability of the IDT71V3559S80PF8? A: The IDT71V3559S80PF8 has a data retention capability of 10 years.

  9. Q: Does the IDT71V3559S80PF8 have any built-in error correction capabilities? A: No, the IDT71V3559S80PF8 does not have built-in error correction capabilities. External error correction techniques can be used if required.

  10. Q: Can I use the IDT71V3559S80PF8 in a high-temperature environment? A: Yes, the IDT71V3559S80PF8 is designed to operate in a wide temperature range of -40°C to +85°C, making it suitable for high-temperature environments.

Please note that these answers are based on general information and may vary depending on specific implementation requirements.