IDT71V3559S85PF8

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
Package: 119-Ball Fine-Pitch Ball Grid Array (FBGA)
Essence: Provides fast and reliable data storage and retrieval capabilities
Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

Memory Type: Synchronous SRAM
Density: 4 Megabits (4Mbit)
Organization: 512K words x 8 bits
Operating Voltage: 3.3V
Access Time: 8.5 ns
Operating Temperature Range: -40°C to +85°C
Interface: Parallel
Data Retention: Greater than 10 years
Package Dimensions: 8mm x 11mm

Detailed Pin Configuration

The IDT71V3559S85PF8 has a total of 119 pins. The pin configuration is as follows:

VDDQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
GND
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
A47
A48
A49
A50
A51
A52
A53
A54
A55
A56
A57
A58
A59
A60
A61
A62
A63
A64
A65
A66
A67
A68
A69
A70
A71
A72
A73
A74
A75
A76
A77
A78
A79
A80
A81
A82
A83
A84
A85
A86
A87
A88
A89
A90
A91
A92
A93
A94
A95
A96
A97
A98
A99
A100
A101
A102
A103
A104
A105
A106
A107
VDDQ

Functional Features

High-speed operation allows for quick data access and retrieval.
Low-power consumption ensures efficient energy usage.
Synchronous design enables synchronized data transfers.
Reliable performance with a long data retention period.
Easy integration into existing circuit designs.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption reduces energy costs. - Synchronous design simplifies data transfer synchronization. - Reliable data storage and retrieval capabilities. - Compact package size saves board space.

Disadvantages: - Limited memory capacity compared to higher-density alternatives. - Higher cost per bit compared to larger memory devices. - Requires careful handling due to the fine-pitch ball grid array package.

Working Principles

技術ソリューションにおける IDT71V3559S85PF8 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V3559S85PF8 in technical solutions:

Q: What is IDT71V3559S85PF8? A: IDT71V3559S85PF8 is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V3559S85PF8? A: The IDT71V3559S85PF8 has a capacity of 4 Megabits (Mb), which is equivalent to 512 Kilobytes (KB).
Q: What is the operating voltage range for IDT71V3559S85PF8? A: The operating voltage range for IDT71V3559S85PF8 is typically between 3.0V and 3.6V.
Q: What is the access time of IDT71V3559S85PF8? A: The access time of IDT71V3559S85PF8 is 8.5 nanoseconds (ns).
Q: What is the package type for IDT71V3559S85PF8? A: IDT71V3559S85PF8 comes in a 100-pin plastic quad flat pack (PQFP) package.
Q: Can IDT71V3559S85PF8 be used in battery-powered devices? A: Yes, IDT71V3559S85PF8 can be used in battery-powered devices as it operates within the typical voltage range of such devices.
Q: Is IDT71V3559S85PF8 compatible with other SRAMs? A: Yes, IDT71V3559S85PF8 is compatible with other SRAMs that have similar specifications and interface requirements.
Q: What are the typical applications of IDT71V3559S85PF8? A: IDT71V3559S85PF8 is commonly used in networking equipment, telecommunications systems, industrial automation, and embedded systems.
Q: Does IDT71V3559S85PF8 support multiple read/write operations simultaneously? A: No, IDT71V3559S85PF8 does not support simultaneous multiple read/write operations. It operates in a single-access mode.
Q: Can IDT71V3559S85PF8 be used as a cache memory in computer systems? A: Yes, IDT71V3559S85PF8 can be used as a cache memory in computer systems, especially in applications where low latency and high-speed access are required.

Please note that these answers are general and may vary depending on specific implementation details and requirements.