IDT71V35761S183BQ

Product Overview

Category

The IDT71V35761S183BQ belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable data retention
• Easy integration into circuit designs

Package

The IDT71V35761S183BQ is available in a compact and durable package, ensuring protection against external factors such as moisture and physical damage.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage and retrieval capabilities for electronic devices.

Packaging/Quantity

The IDT71V35761S183BQ is typically packaged in trays or reels, with each containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 256K x 36
• Operating Voltage: 3.3V
• Access Time: 18ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 100
• Data Retention: Greater than 10 years

Detailed Pin Configuration

The IDT71V35761S183BQ has a total of 100 pins, each serving a specific function within the circuit design. The detailed pin configuration is as follows:

1. VDDQ: Power supply voltage for I/O buffers
2. DQ0-DQ35: Data input/output pins
3. WE#: Write Enable input
4. OE#: Output Enable input
5. CE#: Chip Enable input
6. A0-A17: Address input pins
7. UB/LB#: Upper Byte/Lower Byte control input
8. CLK: Clock input
9. VDD: Power supply voltage for internal circuitry
10. GND: Ground

(Note: This is a simplified representation of the pin configuration. Please refer to the product datasheet for a complete and detailed pinout diagram.)

Functional Features

• High-speed data access and retrieval
• Simultaneous read and write operations
• Easy integration into existing circuit designs
• Low power consumption for energy-efficient operation
• Reliable data retention even in harsh environmental conditions

Advantages and Disadvantages

Advantages

• Fast access time allows for quick data retrieval
• Large storage capacity meets the demands of modern electronic devices
• Low power consumption helps prolong battery life
• Reliable data retention ensures data integrity over extended periods
• Easy integration into circuit designs simplifies the development process

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability in terms of storage capacity
• Susceptible to electromagnetic interference (EMI) due to its high-speed operation

Working Principles

The IDT71V35761S183BQ operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store and retrieve data, allowing for fast and efficient access times. The memory cells within the IC retain their state as long as power is supplied, eliminating the need for constant refreshing.

Detailed Application Field Plans

The IDT71V35761S183BQ finds applications in various electronic devices that require reliable and high-speed memory storage. Some of the common application fields include:

1. Computer systems - Used as cache memory or main memory in desktops, laptops, and servers.
2. Networking equipment - Provides buffering and packet storage capabilities in routers, switches, and network appliances.
3. Telecommunications - Utilized in base stations, voice/data communication systems, and network infrastructure equipment.
4. Industrial automation - Used for data storage and processing in control systems, PLCs, and robotics.
5. Automotive electronics - Provides memory storage for infotainment systems, navigation units, and engine control modules.

Detailed and Complete Alternative Models

1. Micron MT48LC32M16A2P-75: Similar specifications and functionality, with a slightly different pin configuration.
2. Samsung K6R4016V1D-UI10: Offers comparable performance and features, suitable for various memory-intensive applications.
3. Cypress CY7C1041DV33-10ZSXI: Alternative option with similar characteristics, designed for high-speed data access.

(Note: The above alternative models are provided as examples. It is recommended to consult the manufacturer's datasheets for a comprehensive list of alternative models.)

In conclusion, the IDT71V35761S183BQ is a high-performance SRAM IC that offers fast and reliable memory storage capabilities. Its compact package, low power consumption, and easy integration make it suitable for a wide range of electronic devices across various industries.