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IDT71V35761SA166BQ

IDT71V35761SA166BQ

Product Overview

Category

The IDT71V35761SA166BQ belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This SRAM chip is commonly used in various electronic devices and systems for storing data temporarily. It provides high-speed read and write operations, making it suitable for applications that require fast access to data.

Characteristics

  • High-speed operation
  • Non-volatile memory
  • Low power consumption
  • Reliable data retention
  • Easy integration into electronic circuits

Package

The IDT71V35761SA166BQ is available in a compact Ball Grid Array (BGA) package. This package offers excellent thermal performance and allows for easy mounting on printed circuit boards.

Essence

The essence of this SRAM chip lies in its ability to provide fast and reliable data storage and retrieval functions, enhancing the overall performance of electronic devices.

Packaging/Quantity

The IDT71V35761SA166BQ is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in quantities of 100 or more.

Specifications

  • Memory Size: 4 Megabits (4Mb)
  • Organization: 256K words x 16 bits
  • Supply Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: More than 20 years

Detailed Pin Configuration

The IDT71V35761SA166BQ has a total of 48 pins. Below is a detailed pin configuration:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. /CE1
  19. /CE2
  20. /OE
  21. /WE
  22. I/O0
  23. I/O1
  24. I/O2
  25. I/O3
  26. I/O4
  27. I/O5
  28. I/O6
  29. I/O7
  30. I/O8
  31. I/O9
  32. I/O10
  33. I/O11
  34. I/O12
  35. I/O13
  36. I/O14
  37. I/O15
  38. VSS
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed access: The IDT71V35761SA166BQ offers fast read and write operations, enabling quick data retrieval and storage.
  • Low power consumption: This SRAM chip is designed to minimize power consumption, making it suitable for battery-powered devices.
  • Easy integration: The chip can be easily integrated into various electronic circuits due to its compact package and standard pin configuration.
  • Reliable data retention: The IDT71V35761SA166BQ ensures data integrity and retention even in harsh operating conditions.

Advantages and Disadvantages

Advantages

  • High-speed operation enhances overall system performance.
  • Low power consumption prolongs battery life in portable devices.
  • Easy integration simplifies circuit design and manufacturing processes.
  • Reliable data retention ensures data integrity in critical applications.

Disadvantages

  • Limited memory size compared to other storage technologies.
  • Relatively higher cost per bit compared to other memory types.

Working Principles

The IDT71V35761SA166BQ operates based on the principles of static random access memory. It uses flip-flops to store and retrieve data, allowing for fast access times. The chip utilizes a combination of address lines, control signals, and data lines to perform read and write operations.

Detailed Application Field Plans

The IDT71V35761SA166BQ finds applications in various electronic systems, including but not limited to: - Computer motherboards - Networking equipment - Telecommunications devices - Industrial automation systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

  1. Micron MT45W4MW16BCGB-708 WT
  2. Samsung K6R4016V1D-UI10
  3. Cypress CY62157EV30LL-45ZSXI
  4. Renesas R1LV0416DSB-7SI#B0
  5. Nanya NT5CB256M8CN-CG

These alternative models offer similar

技術ソリューションにおける IDT71V35761SA166BQ の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V35761SA166BQ in technical solutions:

  1. Question: What is the IDT71V35761SA166BQ?
    Answer: The IDT71V35761SA166BQ is a high-speed, low-power CMOS synchronous static RAM (SRAM) with a capacity of 4 Meg x 18.

  2. Question: What are the key features of the IDT71V35761SA166BQ?
    Answer: Some key features include a synchronous interface, burst mode operation, low power consumption, and a wide operating temperature range.

  3. Question: What is the maximum operating frequency of the IDT71V35761SA166BQ?
    Answer: The IDT71V35761SA166BQ can operate at a maximum frequency of 166 MHz.

  4. Question: Can the IDT71V35761SA166BQ be used in battery-powered devices?
    Answer: Yes, the IDT71V35761SA166BQ has low power consumption, making it suitable for battery-powered devices.

  5. Question: What is burst mode operation?
    Answer: Burst mode operation allows for consecutive memory access without the need for individual address inputs, improving overall system performance.

  6. Question: Is the IDT71V35761SA166BQ compatible with other SRAMs?
    Answer: Yes, the IDT71V35761SA166BQ follows industry-standard pinout and timing specifications, making it compatible with other SRAMs.

  7. Question: What is the data retention capability of the IDT71V35761SA166BQ?
    Answer: The IDT71V35761SA166BQ has a data retention capability of at least 10 years.

  8. Question: Can the IDT71V35761SA166BQ be used in industrial applications?
    Answer: Yes, the IDT71V35761SA166BQ has a wide operating temperature range (-40°C to +85°C), making it suitable for industrial applications.

  9. Question: Does the IDT71V35761SA166BQ support multiple chip enable inputs?
    Answer: Yes, the IDT71V35761SA166BQ supports two chip enable inputs, allowing for flexible memory organization.

  10. Question: What is the package type of the IDT71V35761SA166BQ?
    Answer: The IDT71V35761SA166BQ is available in a 100-pin TQFP (Thin Quad Flat Package) package.

Please note that these answers are general and may vary depending on the specific application and requirements.