IDT71V35761SA183BQI

Product Overview

Category

The IDT71V35761SA183BQI belongs to the category of semiconductor memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable data retention
• Easy integration into various electronic systems

Package

The IDT71V35761SA183BQI is available in a compact and durable package, designed to protect the internal components from external factors such as moisture and physical damage.

Essence

The essence of the IDT71V35761SA183BQI lies in its ability to provide fast and reliable data storage and retrieval capabilities, making it an essential component in many electronic devices.

Packaging/Quantity

The IDT71V35761SA183BQI is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in quantities suitable for both small-scale and large-scale production.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 1M x 36
• Supply Voltage: 3.3V
• Access Time: 18ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 100
• Data Retention: Greater than 10 years

Detailed Pin Configuration

The IDT71V35761SA183BQI has a total of 100 pins, each serving a specific function. The detailed pin configuration is as follows:

(Pin Number) (Pin Name) - (Function) 1 - VDD - Power supply voltage 2 - VDDQ - Power supply voltage for I/O buffers 3 - A0-A19 - Address inputs 4 - DQ0-DQ35 - Data input/output pins 5 - WE# - Write Enable 6 - OE# - Output Enable 7 - CE1# - Chip Enable 1 8 - CE2# - Chip Enable 2 9 - CE3# - Chip Enable 3 10 - CE4# - Chip Enable 4 11 - CE5# - Chip Enable 5 12 - CE6# - Chip Enable 6 13 - CE7# - Chip Enable 7 14 - CE8# - Chip Enable 8 15 - LB# - Lower Byte Enable 16 - UB# - Upper Byte Enable 17 - CLK - Clock input

(Note: This is a simplified representation of the pin configuration. Please refer to the datasheet for the complete and accurate information.)

Functional Features

• High-speed data access and retrieval
• Low power consumption
• Easy integration into various electronic systems
• Reliable data retention even in harsh environmental conditions
• Multiple chip enable options for flexible system design

Advantages and Disadvantages

Advantages

• Fast and efficient data storage and retrieval
• Low power consumption, making it suitable for battery-powered devices
• Reliable data retention, ensuring data integrity over time
• Versatile integration options due to multiple chip enable pins
• Wide operating temperature range allows usage in various environments

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per bit compared to some alternative memory solutions
• Sensitivity to electrical noise and interference

Working Principles

The IDT71V35761SA183BQI operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store each bit of data, allowing for fast and direct access to the stored information. The data is retained as long as power is supplied to the device.

Detailed Application Field Plans

The IDT71V35761SA183BQI finds applications in various electronic systems, including but not limited to:

1. Computer systems: Used as cache memory for faster data access.
2. Networking equipment: Enables high-speed data buffering and packet processing.
3. Telecommunication devices: Facilitates data storage and retrieval in communication protocols.
4. Industrial control systems: Provides reliable data storage for process control and monitoring.
5. Automotive electronics: Supports data storage requirements in advanced driver assistance systems (ADAS) and infotainment systems.

Detailed and Complete Alternative Models

1. Micron MT48LC16M16A2P-75
2. Samsung K6R4016V1D-UI10
3. Cypress CY7C1041DV33-10ZSXI
4. Renesas R1LV0416DSB-5SI#B0
5. Nanya NT5DS32M8CS-5T

(Note: This is a non-exhaustive list of alternative models. Please refer to the respective manufacturers' datasheets for