IDT71V35761SA200BQ

Product Overview

Use

This product is commonly used in electronic devices for data storage and retrieval purposes.

Characteristics

High-speed performance
Large storage capacity
Low power consumption
Reliable operation

Package

The IDT71V35761SA200BQ is available in a compact surface mount package, which ensures easy integration into various electronic systems.

Essence

This integrated circuit serves as a crucial component in electronic devices, enabling efficient data storage and retrieval operations.

Packaging/Quantity

The IDT71V35761SA200BQ is typically packaged in reels or trays, with each containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

Memory Type: Static Random Access Memory (SRAM)
Organization: 256K x 36
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP

Detailed Pin Configuration

The IDT71V35761SA200BQ features a 100-LQFP package with the following pin configuration:

A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
WE#
CAS#
RAS#
OE#
UB#
LB#
VCC
GND
CLK
CKE
CS#
DM0
DM1
DM2
DM3
DM4
DM5
DM6
DM7
DM8
DM9
DM10
DM11
DM12
DM13
DM14
DM15
DM16
DM17
DM18
DM19
DM20
DM21
DM22
DM23
VCC

Functional Features

High-speed data storage and retrieval
Non-volatile memory
Low power consumption
Easy integration into electronic systems
Reliable operation in various temperature conditions

Advantages and Disadvantages

Advantages

Fast data access and retrieval
Large storage capacity
Low power consumption
Compact package size
Reliable performance

Disadvantages

Limited compatibility with certain systems
Higher cost compared to alternative memory solutions

Working Principles

The IDT71V35761SA200BQ operates based on the principles of static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The integrated circuit utilizes a combination of transistors and capacitors to store and retrieve data quickly and efficiently.

Detailed Application Field Plans

The IDT71V35761SA200

技術ソリューションにおける IDT71V35761SA200BQ の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V35761SA200BQ in technical solutions:

Question: What is the IDT71V35761SA200BQ?
Answer: The IDT71V35761SA200BQ is a high-speed, low-power CMOS static RAM (SRAM) device with a capacity of 4 megabits (4M x 16).
Question: What are the key features of the IDT71V35761SA200BQ?
Answer: Some key features include a fast access time of 10 ns, low power consumption, wide operating voltage range, and a synchronous interface.
Question: What are some typical applications for the IDT71V35761SA200BQ?
Answer: This SRAM device is commonly used in networking equipment, telecommunications systems, industrial automation, and other high-performance computing applications.
Question: How does the IDT71V35761SA200BQ achieve low power consumption?
Answer: It incorporates advanced power-saving features such as automatic power-down and self-refresh modes when the device is not actively accessed.
Question: Can the IDT71V35761SA200BQ operate at different voltage levels?
Answer: Yes, it has a wide operating voltage range of 3.0V to 3.6V, making it compatible with various system designs.
Question: Does the IDT71V35761SA200BQ support burst mode operation?
Answer: Yes, it supports both burst read and burst write operations, allowing for efficient data transfer in high-bandwidth applications.
Question: What is the maximum clock frequency supported by the IDT71V35761SA200BQ?
Answer: The device can operate at a maximum clock frequency of 200 MHz, enabling fast data access and transfer.
Question: Can the IDT71V35761SA200BQ be used in systems with multiple devices?
Answer: Yes, it supports chip enable and output enable signals, allowing for easy integration into systems with multiple SRAM devices.
Question: Does the IDT71V35761SA200BQ have any built-in error correction capabilities?
Answer: No, this SRAM device does not have built-in error correction capabilities. However, external error correction techniques can be implemented if required.
Question: What is the package type of the IDT71V35761SA200BQ?
Answer: It is available in a 48-pin ball grid array (BGA) package, which provides a compact and reliable form factor for easy PCB integration.

Please note that these questions and answers are general and may vary depending on specific application requirements.