IDT71V35761YSA183BQ8

Product Overview

Category

The IDT71V35761YSA183BQ8 belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable data retention
• Easy integration into various electronic systems

Package

The IDT71V35761YSA183BQ8 is available in a compact and durable package, designed to protect the integrated circuit from external factors such as moisture, dust, and physical damage.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The IDT71V35761YSA183BQ8 is typically packaged in trays or reels, with each package containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 256K x 36
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Pin Count: 100
• Data Retention: >10 years

Detailed Pin Configuration

The IDT71V35761YSA183BQ8 has a total of 100 pins, each serving a specific function. Here is a detailed pin configuration:

1. VDD - Power supply voltage
2. VSS - Ground
3. A0-A17 - Address inputs
4. DQ0-DQ35 - Data inputs/outputs
5. WE - Write enable
6. OE - Output enable
7. CE - Chip enable
8. UB/LB - Upper byte/lower byte control
9. CLK - Clock input
10. NC - No connection (reserved pin)

(Note: The above list is not exhaustive and only includes a few representative pins.)

Functional Features

• High-speed data access and retrieval
• Simultaneous read and write operations
• Easy integration with various microprocessors and controllers
• Low power consumption for energy-efficient operation
• Reliable data retention even in harsh environmental conditions

Advantages and Disadvantages

Advantages

• Fast data access and retrieval speed
• Large storage capacity
• Low power consumption
• Compatibility with different electronic systems
• Reliable data retention

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified storage capacity

Working Principles

The IDT71V35761YSA183BQ8 operates based on the principles of static random access memory (SRAM). It stores digital information in a volatile manner, meaning that the stored data is lost when power is removed. The SRAM cells within the IC retain the data as long as power is supplied.

When an address is provided, the IC retrieves the corresponding data from the memory array and makes it available at the output pins. Write operations involve providing the address and data to be stored, which are then written into the memory array.

Detailed Application Field Plans

The IDT71V35761YSA183BQ8 finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Communication devices - Industrial automation systems - Automotive electronics - Medical equipment

Detailed and Complete Alternative Models

• IDT71V35761S200BQI8
• IDT71V35761S166BQI8
• IDT71V35761S133BQI8
• IDT71V35761S100BQI8
• IDT71V35761S85BQI8

(Note: The above list includes a few alternative models and is not exhaustive. Please refer to the manufacturer's documentation for a complete list of alternative models.)

In conclusion, the IDT71V35761YSA183BQ8 is a high-performance SRAM IC with a large storage capacity, low power consumption, and reliable data retention. It finds applications in various electronic systems and offers advantages such as fast data access, compatibility, and energy efficiency. However, it has limitations in terms of cost and scalability.