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IDT71V35761YSA200BQI

IDT71V35761YSA200BQI

Product Overview

Category

The IDT71V35761YSA200BQI belongs to the category of integrated circuits (ICs).

Use

This product is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

  • High-speed performance
  • Large storage capacity
  • Low power consumption
  • Reliable data retention
  • Easy integration into electronic systems

Package

The IDT71V35761YSA200BQI is available in a compact and durable package, designed to protect the integrated circuit from external factors such as moisture, dust, and physical damage.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently, making it an essential component in various electronic devices.

Packaging/Quantity

The IDT71V35761YSA200BQI is typically packaged in trays or reels, with each package containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Model: IDT71V35761YSA200BQI
  • Memory Type: Static Random Access Memory (SRAM)
  • Capacity: 4 Megabits (4Mb)
  • Organization: 256K words x 16 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Interface: Parallel
  • Temperature Range: -40°C to +85°C
  • RoHS Compliance: Yes

Detailed Pin Configuration

The IDT71V35761YSA200BQI has a total of 48 pins, which are assigned specific functions. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. DQ0
  19. DQ1
  20. DQ2
  21. DQ3
  22. DQ4
  23. DQ5
  24. DQ6
  25. DQ7
  26. DQ8
  27. DQ9
  28. DQ10
  29. DQ11
  30. DQ12
  31. DQ13
  32. DQ14
  33. DQ15
  34. /WE
  35. /OE
  36. /CE2
  37. /CE1
  38. /CE0
  39. /UBS
  40. /LBS
  41. /RAS
  42. /CAS
  43. /CS1
  44. /CS2
  45. NC
  46. GND
  47. GND
  48. VCC

Functional Features

  • High-speed data access and retrieval
  • Low power consumption in standby mode
  • Easy integration into existing electronic systems
  • Reliable data retention even in harsh environmental conditions
  • Compatibility with various microprocessors and controllers

Advantages and Disadvantages

Advantages

  • Fast data access and retrieval speed
  • Large storage capacity
  • Low power consumption
  • Compatibility with different electronic systems
  • Reliable data retention

Disadvantages

  • Relatively higher cost compared to other memory technologies
  • Limited scalability beyond the specified capacity
  • Susceptible to electromagnetic interference (EMI)

Working Principles

The IDT71V35761YSA200BQI operates based on the principles of static random access memory (SRAM). It stores digital information in a volatile manner, meaning that the data is lost when power is removed. The memory cells within the IC are organized in a matrix structure, allowing for fast and random access to any specific memory location.

Detailed Application Field Plans

The IDT71V35761YSA200BQI finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Automotive electronics - Industrial control systems - Consumer electronics

Detailed and Complete Alternative Models

  1. IDT71V35761S200BQI: Similar to IDT71V35761YSA200BQI, but with a different temperature range (-40°C to +125°C).
  2. IDT71V35761YSA166BQI: Similar to IDT71V35761YSA200BQI, but with a lower access time of 6 ns.
  3. IDT71V35761YSA225BQI: Similar to IDT71V35761YSA200BQI, but with

技術ソリューションにおける IDT71V35761YSA200BQI の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V35761YSA200BQI in technical solutions:

  1. Question: What is the IDT71V35761YSA200BQI?
    Answer: The IDT71V35761YSA200BQI is a high-speed, low-power, 3.3V synchronous SRAM (Static Random Access Memory) device.

  2. Question: What is the maximum operating frequency of the IDT71V35761YSA200BQI?
    Answer: The IDT71V35761YSA200BQI can operate at a maximum frequency of 200 MHz.

  3. Question: What is the storage capacity of the IDT71V35761YSA200BQI?
    Answer: The IDT71V35761YSA200BQI has a storage capacity of 4 Megabits (512K x 8).

  4. Question: What are the typical applications of the IDT71V35761YSA200BQI?
    Answer: The IDT71V35761YSA200BQI is commonly used in networking equipment, telecommunications systems, industrial automation, and other high-performance computing applications.

  5. Question: Does the IDT71V35761YSA200BQI support multiple read and write operations simultaneously?
    Answer: Yes, the IDT71V35761YSA200BQI supports simultaneous read and write operations, making it suitable for multi-tasking applications.

  6. Question: What is the power supply voltage range for the IDT71V35761YSA200BQI?
    Answer: The IDT71V35761YSA200BQI operates with a power supply voltage range of 3.0V to 3.6V.

  7. Question: Does the IDT71V35761YSA200BQI have any power-saving features?
    Answer: Yes, the IDT71V35761YSA200BQI has a deep power-down mode and a clock enable pin that can be used to reduce power consumption when the device is not in use.

  8. Question: What is the access time of the IDT71V35761YSA200BQI?
    Answer: The IDT71V35761YSA200BQI has an access time of 10 ns, which means it can retrieve data from memory within 10 nanoseconds.

  9. Question: Can the IDT71V35761YSA200BQI operate in harsh environments?
    Answer: Yes, the IDT71V35761YSA200BQI is designed to operate in industrial temperature ranges (-40°C to +85°C) and is suitable for use in rugged environments.

  10. Question: Is the IDT71V35761YSA200BQI compatible with other SRAM devices?
    Answer: Yes, the IDT71V35761YSA200BQI follows industry-standard pinout and timing specifications, making it compatible with other SRAM devices in the market.

Please note that these answers are general and may vary depending on the specific requirements and implementation of the IDT71V35761YSA200BQI in different technical solutions.