IDT, Integrated Device Technology Inc
画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
IDT71V3576S133PF
詳細を表示 DataSheets

IDT71V3576S133PF

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 100-pin plastic quad flat pack (PQFP)
  • Essence: Provides fast and reliable data storage and retrieval capabilities for various electronic devices
  • Packaging/Quantity: Available in tape and reel packaging, quantity depends on customer requirements

Specifications

  • Memory Type: Synchronous SRAM
  • Density: 4 Megabits (4Mb)
  • Organization: 256K words x 16 bits
  • Operating Voltage: 3.3V
  • Access Time: 8.5 ns
  • Clock Frequency: 133 MHz
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Greater than 10 years

Pin Configuration

The IDT71V3576S133PF has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSSQ
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VDDQ
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. A16
  37. A17
  38. A18
  39. A19
  40. VSSQ
  41. CE1#
  42. CE2#
  43. WE#
  44. OE#
  45. UB#
  46. LB#
  47. ZZ#
  48. ZZ#
  49. ZZ#
  50. ZZ#
  51. ZZ#
  52. ZZ#
  53. ZZ#
  54. ZZ#
  55. ZZ#
  56. ZZ#
  57. ZZ#
  58. ZZ#
  59. ZZ#
  60. ZZ#
  61. ZZ#
  62. ZZ#
  63. ZZ#
  64. ZZ#
  65. ZZ#
  66. ZZ#
  67. ZZ#
  68. ZZ#
  69. ZZ#
  70. ZZ#
  71. ZZ#
  72. ZZ#
  73. ZZ#
  74. ZZ#
  75. ZZ#
  76. ZZ#
  77. ZZ#
  78. ZZ#
  79. ZZ#
  80. ZZ#
  81. ZZ#
  82. ZZ#
  83. ZZ#
  84. ZZ#
  85. ZZ#
  86. ZZ#
  87. ZZ#
  88. ZZ#
  89. ZZ#
  90. ZZ#
  91. ZZ#
  92. ZZ#
  93. ZZ#
  94. ZZ#
  95. ZZ#
  96. ZZ#
  97. ZZ#
  98. ZZ#
  99. ZZ#
  100. VDD

Functional Features

  • High-speed operation with an access time of 8.5 ns
  • Low-power consumption for efficient energy usage
  • Synchronous interface allows for easy integration with other components
  • Reliable data storage and retrieval capabilities
  • Supports simultaneous read and write operations
  • Automatic power-down mode for reduced power consumption during idle periods

Advantages and Disadvantages

Advantages: - High-speed operation enables fast data access - Low-power consumption for energy-efficient applications - Synchronous interface simplifies integration with other components - Reliable data storage and retrieval capabilities

Disadvantages: - Limited memory capacity compared to newer technologies - Higher cost per bit compared to other memory options - Requires external clock signal for synchronous operation

Working Principles

The IDT71V3576S133PF is a synchronous SRAM that stores and retrieves data using an array of memory cells. It operates synchronously with an external clock signal, allowing for precise timing and efficient data transfer. The memory cells are organized into 256K words, each consisting of 16 bits.

During read operations, the desired memory location is selected using the address inputs (A0-A19), and the corresponding data is output on the DQ0-DQ15 pins. Write operations involve providing the address and data inputs, along with control signals such as CE1#, CE2#, WE#, and OE#.

The device also features automatic power-down mode, which reduces power consumption when the memory is not actively accessed

技術ソリューションにおける IDT71V3576S133PF の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V3576S133PF in technical solutions:

  1. Q: What is IDT71V3576S133PF? A: IDT71V3576S133PF is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V3576S133PF? A: IDT71V3576S133PF has a capacity of 4 Megabits (Mb), which is equivalent to 512 Kilobytes (KB).

  3. Q: What is the operating voltage range for IDT71V3576S133PF? A: The operating voltage range for IDT71V3576S133PF is typically between 3.0V and 3.6V.

  4. Q: What is the access time of IDT71V3576S133PF? A: IDT71V3576S133PF has an access time of 13.5 nanoseconds (ns), which refers to the time it takes to read or write data.

  5. Q: Can IDT71V3576S133PF be used in battery-powered devices? A: Yes, IDT71V3576S133PF can be used in battery-powered devices as it operates within the typical voltage range of such devices.

  6. Q: Is IDT71V3576S133PF compatible with different microcontrollers? A: Yes, IDT71V3576S133PF is compatible with various microcontrollers that support SRAM interfacing.

  7. Q: Can IDT71V3576S133PF be used in industrial applications? A: Yes, IDT71V3576S133PF is suitable for industrial applications as it can withstand extended temperature ranges and has high reliability.

  8. Q: Does IDT71V3576S133PF support multiple read/write operations simultaneously? A: No, IDT71V3576S133PF is a synchronous SRAM and does not support simultaneous read/write operations.

  9. Q: Can IDT71V3576S133PF be used in high-speed data processing systems? A: Yes, IDT71V3576S133PF is designed for high-speed operation and can be used in data-intensive applications.

  10. Q: Are there any specific precautions to consider when using IDT71V3576S133PF? A: It is recommended to follow the manufacturer's guidelines regarding power supply decoupling, signal integrity, and operating conditions to ensure optimal performance and reliability of IDT71V3576S133PF.

Please note that these answers are general and may vary depending on specific application requirements and datasheet specifications.