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IDT71V3576S133PF8

IDT71V3576S133PF8

Product Overview

Category

The IDT71V3576S133PF8 belongs to the category of integrated circuits (ICs).

Use

This IC is commonly used in electronic devices for memory storage and retrieval purposes.

Characteristics

  • High-speed performance
  • Low power consumption
  • Large storage capacity
  • Reliable data retention
  • Compatibility with various systems

Package

The IDT71V3576S133PF8 is available in a small form factor package, which allows for easy integration into electronic devices.

Essence

The essence of this product lies in its ability to provide efficient and reliable memory storage and retrieval capabilities.

Packaging/Quantity

The IDT71V3576S133PF8 is typically packaged in reels or trays, with each package containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: Static Random Access Memory (SRAM)
  • Organization: 256K x 36
  • Operating Voltage: 3.3V
  • Access Time: 133 nanoseconds
  • Interface: Parallel
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: 100-pin TQFP (Thin Quad Flat Pack)

Detailed Pin Configuration

The IDT71V3576S133PF8 has a total of 100 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. DQ16
  19. DQ17
  20. DQ18
  21. DQ19
  22. DQ20
  23. DQ21
  24. DQ22
  25. DQ23
  26. DQ24
  27. DQ25
  28. DQ26
  29. DQ27
  30. DQ28
  31. DQ29
  32. DQ30
  33. DQ31
  34. VSSQ
  35. A0
  36. A1
  37. A2
  38. A3
  39. A4
  40. A5
  41. A6
  42. A7
  43. A8
  44. A9
  45. A10
  46. A11
  47. A12
  48. A13
  49. A14
  50. A15
  51. A16
  52. A17
  53. A18
  54. A19
  55. A20
  56. A21
  57. A22
  58. A23
  59. A24
  60. A25
  61. A26
  62. A27
  63. A28
  64. A29
  65. A30
  66. A31
  67. CE1#
  68. CE2#
  69. WE#
  70. OE#
  71. UB#
  72. LB#
  73. ZZ#
  74. ZZ#
  75. ZZ#
  76. ZZ#
  77. ZZ#
  78. ZZ#
  79. ZZ#
  80. ZZ#
  81. ZZ#
  82. ZZ#
  83. ZZ#
  84. ZZ#
  85. ZZ#
  86. ZZ#
  87. ZZ#
  88. ZZ#
  89. ZZ#
  90. ZZ#
  91. ZZ#
  92. ZZ#
  93. ZZ#
  94. ZZ#
  95. ZZ#
  96. ZZ#
  97. ZZ#
  98. ZZ#
  99. VDD
  100. VSS

Functional Features

  • High-speed data access and retrieval
  • Low power consumption during operation
  • Reliable data retention even in harsh environmental conditions
  • Easy integration into various electronic devices
  • Compatibility with different system architectures
  • Efficient memory management capabilities

Advantages and Disadvantages

Advantages

  • High-speed performance allows for quick data access and retrieval.
  • Low power consumption helps to conserve energy in electronic devices.
  • Large storage capacity enables the handling of extensive data requirements.
  • Reliable data retention ensures the integrity of stored information.
  • Compatibility with various systems allows for versatile usage.

Disadvantages

  • Limited availability of alternative models may restrict flexibility in certain applications.
  • Higher cost compared to some other memory technologies.
  • Sensitivity to electrostatic discharge (ESD) requires careful handling during installation and maintenance.

Working Principles

The IDT71V3576S133PF8 operates based on the principles of static random access memory (SRAM). It stores

技術ソリューションにおける IDT71V3576S133PF8 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V3576S133PF8 in technical solutions:

  1. Question: What is the IDT71V3576S133PF8?
    Answer: The IDT71V3576S133PF8 is a high-speed, low-power CMOS synchronous static RAM (SRAM) with a capacity of 4 Meg x 18.

  2. Question: What is the operating voltage range for this SRAM?
    Answer: The IDT71V3576S133PF8 operates at a voltage range of 3.0V to 3.6V.

  3. Question: What is the maximum clock frequency supported by this SRAM?
    Answer: This SRAM supports a maximum clock frequency of 133 MHz.

  4. Question: Can I use this SRAM in battery-powered devices?
    Answer: Yes, the IDT71V3576S133PF8 is designed to be low-power, making it suitable for battery-powered applications.

  5. Question: What is the access time of this SRAM?
    Answer: The access time of the IDT71V3576S133PF8 is 6 ns.

  6. Question: Does this SRAM support burst mode operation?
    Answer: Yes, this SRAM supports burst mode operation with a burst length of 1, 2, 4, or 8.

  7. Question: Can I use this SRAM in industrial temperature environments?
    Answer: Yes, the IDT71V3576S133PF8 is designed to operate in industrial temperature ranges (-40°C to +85°C).

  8. Question: What is the package type for this SRAM?
    Answer: The IDT71V3576S133PF8 is available in a 100-pin TQFP (Thin Quad Flat Pack) package.

  9. Question: Does this SRAM have any built-in error correction capabilities?
    Answer: No, the IDT71V3576S133PF8 does not have built-in error correction capabilities.

  10. Question: Can I use multiple IDT71V3576S133PF8 chips in parallel to increase memory capacity?
    Answer: Yes, you can use multiple chips in parallel to increase the overall memory capacity in your system.

Please note that these answers are based on general information and it's always recommended to refer to the datasheet or consult with the manufacturer for specific details and application requirements.