IDT71V3576S150PF

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 100-pin plastic quad flat pack (PQFP)
• Essence: Stores and retrieves digital information in electronic systems
• Packaging/Quantity: Sold individually or in bulk quantities

Specifications

• Memory Type: SRAM
• Organization: 256K x 36
• Operating Voltage: 3.3V
• Access Time: 15 ns
• Standby Current: 10 mA
• Package Dimensions: 14mm x 20mm
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V3576S150PF has a total of 100 pins. The pin configuration is as follows:

1. VDDQ
2. GND
3. A0
4. A1
5. A2
6. A3
7. A4
8. A5
9. A6
10. A7
11. A8
12. A9
13. A10
14. A11
15. A12
16. A13
17. A14
18. A15
19. A16
20. A17
21. A18
22. A19
23. A20
24. A21
25. A22
26. A23
27. A24
28. A25
29. A26
30. A27
31. A28
32. A29
33. A30
34. A31
35. DQ0
36. DQ1
37. DQ2
38. DQ3
39. DQ4
40. DQ5
41. DQ6
42. DQ7
43. DQ8
44. DQ9
45. DQ10
46. DQ11
47. DQ12
48. DQ13
49. DQ14
50. DQ15
51. DQ16
52. DQ17
53. DQ18
54. DQ19
55. DQ20
56. DQ21
57. DQ22
58. DQ23
59. DQ24
60. DQ25
61. DQ26
62. DQ27
63. DQ28
64. DQ29
65. DQ30
66. DQ31
67. WE#
68. OE#
69. UB#
70. LB#
71. CE#
72. ZZ#
73. RAS#
74. CAS#
75. CKE#
76. CLK
77. VDD
78. GND
79. VDDQ
80. GND
81. A32
82. A33
83. A34
84. A35
85. A36
86. A37
87. A38
88. A39
89. A40
90. A41
91. A42
92. A43
93. A44
94. A45
95. A46
96. A47
97. A48
98. A49
99. A50
100. A51

Functional Features

• High-speed operation: The IDT71V3576S150PF offers fast access times, making it suitable for applications that require quick data retrieval.
• Low-power consumption: This memory device is designed to minimize power consumption, making it energy-efficient and suitable for battery-powered devices.
• Synchronous operation: The device operates synchronously with a system clock, ensuring reliable and accurate data transfer.
• Easy integration: The IDT71V3576S150PF can be easily integrated into various electronic systems due to its standard pin configuration and compatibility with common memory interfaces.

Advantages and Disadvantages

Advantages: - High-speed operation enables quick data access - Low-power consumption prolongs battery life in portable devices - Synchronous operation ensures reliable data transfer - Easy integration into existing systems

Disadvantages: - Limited storage capacity compared to other memory technologies - Relatively higher cost per bit compared to alternative memory options

Working Principles

The IDT71V3576S150PF is a synchronous SRAM that stores digital information using flip-flops. It operates by receiving address inputs, which specify the location of the data to be accessed. The device reads or writes data based on control signals such as read enable (OE#) and write enable (WE#). The synchronous operation ensures that data transfers occur at specific points in time, synchronized with the system clock.

Detailed Application