画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
IDT71V3576YS150PF8

IDT71V3576YS150PF8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics:
    • High-speed performance
    • Large storage capacity
    • Low power consumption
  • Package: PF8 package
  • Essence: Non-volatile memory
  • Packaging/Quantity: Single unit packaging

Specifications

  • Model: IDT71V3576YS150PF8
  • Memory Type: Static Random Access Memory (SRAM)
  • Density: 4 Megabits (4Mbit)
  • Organization: 512K words x 8 bits
  • Operating Voltage: 3.3V
  • Access Time: 15 nanoseconds (ns)
  • Operating Temperature: -40°C to +85°C
  • Data Retention: 10 years
  • Package Type: 100-pin Thin Quad Flat Pack (TQFP)

Pin Configuration

The IDT71V3576YS150PF8 has a total of 100 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. /CE1
  19. /CE2
  20. /OE
  21. /WE
  22. I/O0
  23. I/O1
  24. I/O2
  25. I/O3
  26. I/O4
  27. I/O5
  28. I/O6
  29. I/O7
  30. /UBS
  31. /LBS
  32. /BYTE
  33. VSS
  34. DQ0
  35. DQ1
  36. DQ2
  37. DQ3
  38. DQ4
  39. DQ5
  40. DQ6
  41. DQ7
  42. VCC
  43. /ZZ
  44. /GND
  45. /ZZ
  46. /GND
  47. /ZZ
  48. /GND
  49. /ZZ
  50. /GND
  51. /ZZ
  52. /GND
  53. /ZZ
  54. /GND
  55. /ZZ
  56. /GND
  57. /ZZ
  58. /GND
  59. /ZZ
  60. /GND
  61. /ZZ
  62. /GND
  63. /ZZ
  64. /GND
  65. /ZZ
  66. /GND
  67. /ZZ
  68. /GND
  69. /ZZ
  70. /GND
  71. /ZZ
  72. /GND
  73. /ZZ
  74. /GND
  75. /ZZ
  76. /GND
  77. /ZZ
  78. /GND
  79. /ZZ
  80. /GND
  81. /ZZ
  82. /GND
  83. /ZZ
  84. /GND
  85. /ZZ
  86. /GND
  87. /ZZ
  88. /GND
  89. /ZZ
  90. /GND
  91. /ZZ
  92. /GND
  93. /ZZ
  94. /GND
  95. /ZZ
  96. /GND
  97. /ZZ
  98. /GND
  99. /ZZ
  100. /GND

Functional Features

  • High-speed access and data transfer
  • Non-volatile memory retains data even when power is disconnected
  • Low power consumption for energy efficiency
  • Easy integration into existing circuit designs
  • Reliable performance with high data retention

Advantages and Disadvantages

Advantages: - Fast access time for quick data retrieval - Large storage capacity for storing a significant amount of data - Low power consumption helps conserve energy - Reliable performance ensures data integrity - Easy integration into various electronic devices

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited data retention period without power supply - Sensitive to electromagnetic interference (EMI) - Requires careful handling and storage to avoid damage

Working Principles

The IDT71V3576YS150PF8 is a static random access memory (SRAM) device. It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a matrix of rows and columns, allowing for efficient read

技術ソリューションにおける IDT71V3576YS150PF8 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V3576YS150PF8 in technical solutions:

  1. Q: What is IDT71V3576YS150PF8? A: IDT71V3576YS150PF8 is a specific model of synchronous static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V3576YS150PF8? A: IDT71V3576YS150PF8 has a capacity of 4 Megabits (Mb), which is equivalent to 512 Kilobytes (KB).

  3. Q: What is the operating voltage range for IDT71V3576YS150PF8? A: The operating voltage range for IDT71V3576YS150PF8 is typically between 3.0V and 3.6V.

  4. Q: What is the access time of IDT71V3576YS150PF8? A: IDT71V3576YS150PF8 has an access time of 15 nanoseconds (ns), meaning it takes approximately 15 ns to read or write data.

  5. Q: Can IDT71V3576YS150PF8 be used in battery-powered devices? A: Yes, IDT71V3576YS150PF8 can be used in battery-powered devices as long as the operating voltage requirements are met.

  6. Q: Is IDT71V3576YS150PF8 compatible with other SRAM chips? A: Yes, IDT71V3576YS150PF8 is compatible with other SRAM chips that have similar specifications and interface requirements.

  7. Q: What is the package type for IDT71V3576YS150PF8? A: IDT71V3576YS150PF8 is available in a 44-pin Plastic Thin Small Outline Package (TSOP).

  8. Q: Can IDT71V3576YS150PF8 be used in high-temperature environments? A: Yes, IDT71V3576YS150PF8 has a specified operating temperature range of -40°C to +85°C, making it suitable for many industrial applications.

  9. Q: Does IDT71V3576YS150PF8 support burst mode operation? A: No, IDT71V3576YS150PF8 does not support burst mode operation. It operates in asynchronous mode.

  10. Q: What are some typical applications for IDT71V3576YS150PF8? A: IDT71V3576YS150PF8 is commonly used in various technical solutions such as networking equipment, telecommunications systems, industrial automation, and embedded systems where fast and reliable data storage is required.

Please note that the answers provided here are general and may vary depending on specific requirements and use cases.