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IDT71V3578YS133PF

IDT71V3578YS133PF

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics:
    • High-speed performance
    • Low power consumption
    • Large storage capacity
  • Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
  • Essence: Non-volatile Static Random Access Memory (nvSRAM)
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements.

Specifications

  • Memory Type: Asynchronous nvSRAM
  • Density: 256Kb (32K x 8)
  • Access Time: 10ns
  • Operating Voltage: 3.0V to 3.6V
  • Standby Current: 20μA (typical)
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: 20 years (minimum)

Detailed Pin Configuration

The IDT71V3578YS133PF has a total of 48 pins. The pin configuration is as follows:

  1. VCCQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. A0
  12. A1
  13. A2
  14. A3
  15. A4
  16. A5
  17. A6
  18. A7
  19. A8
  20. A9
  21. A10
  22. A11
  23. A12
  24. A13
  25. A14
  26. A15
  27. A16
  28. A17
  29. A18
  30. A19
  31. A20
  32. A21
  33. A22
  34. A23
  35. A24
  36. A25
  37. A26
  38. A27
  39. A28
  40. A29
  41. A30
  42. A31
  43. CE#
  44. OE#
  45. WE#
  46. RESET#
  47. VCC
  48. GND

Functional Features

  • Non-volatile memory: Retains data even when power is lost.
  • High-speed performance: Access time of 10ns allows for quick data retrieval.
  • Low power consumption: Standby current of only 20μA helps conserve energy.
  • Large storage capacity: 256Kb provides ample space for data storage.

Advantages and Disadvantages

Advantages: - Non-volatile nature ensures data integrity during power interruptions. - Fast access time enables efficient data retrieval. - Low power consumption contributes to energy efficiency. - Ample storage capacity meets various application requirements.

Disadvantages: - Relatively higher cost compared to traditional volatile memory. - Limited availability in certain package options.

Working Principles

The IDT71V3578YS133PF utilizes non-volatile static random access memory (nvSRAM) technology. It combines the speed and ease of use of SRAM with the non-volatility of Flash memory. The device employs a backup power source, such as a small capacitor or battery, to retain data during power loss. This ensures that critical information remains intact even in the event of unexpected power interruptions.

Detailed Application Field Plans

The IDT71V3578YS133PF is suitable for a wide range of applications, including but not limited to:

  1. Industrial control systems
  2. Automotive electronics
  3. Medical equipment
  4. Communication infrastructure
  5. Aerospace and defense systems

Detailed and Complete Alternative Models

  1. IDT71V3578YS133BF: Similar to IDT71V3578YS133PF, but available in a different package.
  2. IDT71V3578YS133CF: Higher density variant with 512Kb capacity.
  3. IDT71V3578YS133DF: Lower power consumption version with reduced standby current.

These alternative models offer similar functionality and can be considered based on specific application requirements.

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技術ソリューションにおける IDT71V3578YS133PF の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V3578YS133PF in technical solutions:

  1. Q: What is IDT71V3578YS133PF? A: IDT71V3578YS133PF is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V3578YS133PF? A: The IDT71V3578YS133PF has a capacity of 4 Megabits (Mb), which is equivalent to 512 Kilobytes (KB).

  3. Q: What does "133PF" in the model number represent? A: "133PF" refers to the speed grade of the SRAM, indicating a maximum operating frequency of 133 MHz.

  4. Q: What are the typical applications of IDT71V3578YS133PF? A: IDT71V3578YS133PF is commonly used in various technical solutions such as networking equipment, telecommunications systems, industrial automation, and embedded systems.

  5. Q: What is the voltage requirement for IDT71V3578YS133PF? A: IDT71V3578YS133PF operates at a supply voltage of 3.3 volts (V).

  6. Q: Does IDT71V3578YS133PF support multiple read and write operations simultaneously? A: Yes, IDT71V3578YS133PF supports simultaneous read and write operations, making it suitable for high-performance applications.

  7. Q: Can IDT71V3578YS133PF operate in different temperature ranges? A: Yes, IDT71V3578YS133PF is designed to operate within the industrial temperature range of -40°C to +85°C.

  8. Q: Does IDT71V3578YS133PF have any power-saving features? A: Yes, IDT71V3578YS133PF supports various power-saving modes such as standby and automatic power-down, helping to conserve energy in low activity periods.

  9. Q: Is IDT71V3578YS133PF compatible with other SRAM devices? A: Yes, IDT71V3578YS133PF is pin-compatible with other 4Mb SRAMs, allowing for easy replacement or upgrade in existing designs.

  10. Q: Can I obtain technical support and documentation for IDT71V3578YS133PF? A: Yes, Integrated Device Technology provides comprehensive technical support, datasheets, application notes, and reference designs for IDT71V3578YS133PF on their official website.