IDT71V3578YS133PFI8

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V3578YS133PFI8 is a high-speed, low-power synchronous static random access memory (SRAM) designed for use in various electronic devices and systems.

Characteristics: - High speed: The IDT71V3578YS133PFI8 operates at a clock frequency of 133 MHz, allowing for fast data access and transfer. - Low power consumption: This SRAM is designed to minimize power consumption, making it suitable for battery-powered devices and energy-efficient applications. - Large capacity: With a storage capacity of 4 megabits (512K x 8), the IDT71V3578YS133PFI8 can store a significant amount of data. - Synchronous operation: The device synchronizes its internal operations with an external clock signal, ensuring reliable and accurate data transfers. - Easy integration: The IDT71V3578YS133PFI8 is compatible with standard SRAM interfaces, making it easy to integrate into existing designs.

Package: The IDT71V3578YS133PFI8 is available in a 44-pin plastic thin quad flat pack (TQFP) package, which provides mechanical protection and facilitates soldering onto printed circuit boards.

Essence: The essence of the IDT71V3578YS133PFI8 lies in its ability to provide high-speed, low-power, and reliable data storage and retrieval capabilities.

Packaging/Quantity: The IDT71V3578YS133PFI8 is typically sold in reels containing 250 units per reel.

Specifications

• Organization: 512K x 8
• Operating Voltage: 3.3V
• Clock Frequency: 133 MHz
• Access Time: 6 ns
• Standby Current: 10 μA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V3578YS133PFI8 has a total of 44 pins. The pin configuration is as follows:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. WE#: Write Enable
4. OE#: Output Enable
5. CE#: Chip Enable
6. UB#/LB#: Upper Byte/Lower Byte Select
7. CLK: Clock Input
8. VCC: Power Supply (3.3V)
9. GND: Ground

(Note: The remaining pins are not listed for brevity.)

Functional Features

• High-speed operation allows for quick data access and transfer.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous operation ensures reliable and accurate data transfers.
• Easy integration with standard SRAM interfaces simplifies design implementation.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low-power consumption prolongs battery life in portable devices. - Large storage capacity accommodates a significant amount of data. - Synchronous operation ensures reliable and accurate data transfers. - Easy integration with existing designs reduces development time.

Disadvantages: - Limited operating temperature range (-40°C to +85°C). - Relatively high standby current compared to some low-power SRAM alternatives.

Working Principles

The IDT71V3578YS133PFI8 operates based on the principles of synchronous static random access memory (SRAM). It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The device synchronizes its internal operations with an external clock signal, allowing for precise timing and reliable data transfers. The address inputs are used to select the desired memory location, while the data inputs/outputs facilitate the storage and retrieval of information.

Detailed Application Field Plans

The IDT71V3578YS133PFI8 can be utilized in various applications, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Consumer electronics - Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V3557S85BQGI: This alternative model offers a lower clock frequency (85 MHz) but provides a larger storage capacity of 8 megabits (1M x 8). It is available in a 119-ball BGA package.
2. IDT71V35761S200BQG: This alternative model operates at a higher clock frequency (200 MHz) and offers a larger storage capacity of 16 megabits (2M x 8). It is available in a 119-ball BGA package.
3. IDT71V35781S166BQG: This alternative model operates at a higher clock frequency (