IDT71V416L10BEGI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory
• Packaging/Quantity: Individual units or reels

Specifications

• Model Number: IDT71V416L10BEGI8
• Memory Type: Static Random Access Memory (SRAM)
• Density: 4 Megabits (4Mbit)
• Organization: 512K words x 8 bits
• Access Time: 10 nanoseconds (ns)
• Operating Voltage: 3.3 volts (V)
• Operating Temperature: -40°C to +85°C
• Data Retention: Greater than 20 years
• Package Dimensions: 13mm x 15mm

Pin Configuration

The IDT71V416L10BEGI8 has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. DQ0
35. DQ1
36. DQ2
37. DQ3
38. DQ4
39. DQ5
40. DQ6
41. DQ7
42. WE#
43. OE#
44. CE#
45. UB#
46. LB#
47. CLK
48. GND

Functional Features

• High-speed access and data transfer
• Non-volatile storage of data
• Low power consumption during operation
• Easy integration into existing systems
• Reliable performance and data retention

Advantages

• Fast access time allows for quick data retrieval
• Large storage capacity accommodates extensive data requirements
• Low power consumption reduces energy usage and heat generation
• Non-volatile memory ensures data retention even during power loss
• Compact BGA package enables space-efficient designs

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited write endurance compared to some non-volatile memories
• Sensitive to electrostatic discharge (ESD) and voltage fluctuations

Working Principles

The IDT71V416L10BEGI8 is a static random access memory (SRAM) device. It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a matrix, with each cell representing a bit of data. Accessing and modifying data in the memory involves sending specific address signals and control signals.

Application Field Plans

The IDT71V416L10BEGI8 is commonly used in various electronic systems that require high-speed and reliable data storage. Some application fields include:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial automation systems
5. Medical equipment
6. Automotive electronics

Alternative Models

• IDT71V416S10PHG
• IDT71V416S10YGI
• IDT71V416S10PHI
• IDT71V416S10YI
• IDT71V416S10PH

These alternative models offer similar specifications and functionality to the IDT71V416L10BEGI8, providing flexibility in choosing the most suitable memory device for specific applications.

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