IDT71V416L12YI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Thin Small Outline Package (TSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (4Mbit)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Clock Frequency: 83 MHz
• Standby Current: 10 µA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V416L12YI8 has a total of 44 pins. The pin configuration is as follows:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. CLK: Clock Input
7. VCC: Power Supply
8. GND: Ground

(Continues for the remaining pins)

Functional Features

• High-speed operation allows for quick data access and transfer
• Low-power consumption helps conserve energy in portable devices
• Synchronous design ensures reliable and synchronized data transactions
• Easy integration into various electronic systems due to standard interface protocols
• Non-volatile storage capability retains data even when power is disconnected

Advantages and Disadvantages

Advantages: - Fast access time and high clock frequency enable efficient data processing - Low standby current consumption prolongs battery life in portable devices - Reliable and durable memory storage solution - Easy to interface with other components due to standard protocols

Disadvantages: - Limited storage capacity compared to other memory technologies - Relatively higher cost per bit compared to alternative memory options

Working Principles

The IDT71V416L12YI8 operates as a synchronous SRAM, utilizing a clock signal to synchronize data transfers. When the chip enable (CE#) and output enable (OE#) signals are active, the device can read or write data based on the address inputs (A0-A18). The write enable (WE#) signal controls the write operation, while the data inputs/outputs (DQ0-DQ7) handle the actual data transfer.

Detailed Application Field Plans

The IDT71V416L12YI8 is commonly used in various electronic systems that require fast and reliable data storage capabilities. Some potential application fields include:

1. Computer Systems: Used as cache memory for processors, providing quick access to frequently accessed data.
2. Networking Equipment: Utilized as packet buffers or frame stores in routers and switches, ensuring smooth data transmission.
3. Telecommunications Devices: Employed as data buffers in communication systems, facilitating real-time data processing.
4. Industrial Control Systems: Integrated into control units for efficient data storage and retrieval in automation processes.
5. Automotive Electronics: Used in automotive control modules for storing critical data and firmware updates.

Detailed and Complete Alternative Models

1. IDT71V416S: Similar to IDT71V416L12YI8 but operates at a faster access time of 10 ns.
2. IDT71V424: Offers double the storage capacity with 8 Megabits (8Mbit) and similar characteristics.
3. IDT71V432: Provides quadruple the storage capacity with 16 Megabits (16Mbit) and comparable specifications.

(Note: The above alternative models are just examples and not an exhaustive list.)

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