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IDT71V416S10BEI8

IDT71V416S10BEI8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random access memory (SRAM)
  • Package: 44-pin TSOP (Thin Small Outline Package)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

  • Memory Size: 4 Megabits (4M x 16)
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Greater than 20 years
  • Interface: Synchronous

Detailed Pin Configuration

The IDT71V416S10BEI8 has a total of 44 pins. The pin configuration is as follows:

  1. VCCQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. GND
  19. A0
  20. A1
  21. A2
  22. A3
  23. A4
  24. A5
  25. A6
  26. A7
  27. A8
  28. A9
  29. A10
  30. A11
  31. A12
  32. A13
  33. A14
  34. A15
  35. CE1#
  36. CE2#
  37. WE#
  38. OE#
  39. BYTE#
  40. UB#
  41. LB#
  42. CLK
  43. VCC
  44. GND

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low-power consumption makes it suitable for battery-powered devices.
  • Synchronous interface ensures reliable and efficient communication with the memory device.
  • Byte control feature enables selective reading or writing of specific bytes within the memory.
  • Easy integration into existing circuit designs due to standard pin configuration.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Reliable data retention ensures data integrity over extended periods. - Synchronous interface simplifies communication with the memory device.

Disadvantages: - Limited memory size compared to other storage options. - Higher cost per bit compared to larger capacity memory devices. - Requires careful handling and proper ESD precautions during installation.

Working Principles

The IDT71V416S10BEI8 is a synchronous SRAM that stores and retrieves data using an internal clock signal. When a read operation is initiated, the address lines (A0-A15) specify the location from which data needs to be retrieved. The data is then output on the DQ0-DQ15 pins. Similarly, during a write operation, the address lines specify the location where data needs to be stored, and the data is provided on the DQ0-DQ15 pins.

The memory device operates at a voltage of 3.3V and has an access time of 10 ns, allowing for fast data transfer. The synchronous interface ensures that data is transferred in sync with the clock signal, enabling reliable communication between the memory device and the controlling circuitry.

Detailed Application Field Plans

The IDT71V416S10BEI8 is commonly used in various applications that require high-speed and reliable data storage. Some of the potential application fields include:

  1. Telecommunications: Used in networking equipment, routers, and switches for buffering and caching purposes.
  2. Consumer Electronics: Integrated into gaming consoles, set-top boxes, and digital cameras to store temporary data or firmware.
  3. Automotive: Employed in automotive infotainment systems, navigation units, and advanced driver-assistance systems (ADAS) for data storage and processing.
  4. Industrial Automation: Utilized in programmable logic controllers (PLCs), robotics, and control systems for storing critical data and program code.
  5. Medical Devices: Incorporated into medical imaging equipment, patient monitoring systems, and diagnostic devices for fast data access and retrieval.

Detailed and Complete Alternative Models

  1. IDT71V416L: Low-power variant of the IDT71V416S10BEI8 with similar specifications.
  2. IDT71V416S12: Higher speed version

技術ソリューションにおける IDT71V416S10BEI8 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V416S10BEI8 in technical solutions:

  1. Q: What is the IDT71V416S10BEI8? A: The IDT71V416S10BEI8 is a 4 Meg x 16 CMOS Static RAM (SRAM) integrated circuit.

  2. Q: What are the key features of the IDT71V416S10BEI8? A: Some key features include a high-speed access time of 10 ns, low power consumption, and a wide operating voltage range.

  3. Q: What is the typical application of the IDT71V416S10BEI8? A: It is commonly used as a memory component in various electronic devices such as computers, routers, switches, and other embedded systems.

  4. Q: What is the maximum operating frequency of the IDT71V416S10BEI8? A: The maximum operating frequency is typically around 100 MHz.

  5. Q: Can the IDT71V416S10BEI8 be used in battery-powered devices? A: Yes, it can be used in battery-powered devices due to its low power consumption characteristics.

  6. Q: Does the IDT71V416S10BEI8 support multiple read and write operations simultaneously? A: No, it does not support simultaneous read and write operations. It operates in a single-port mode.

  7. Q: What is the voltage supply range for the IDT71V416S10BEI8? A: The voltage supply range is typically between 4.5V and 5.5V.

  8. Q: Can the IDT71V416S10BEI8 be used in industrial temperature environments? A: Yes, it is designed to operate in a wide temperature range, typically from -40°C to +85°C.

  9. Q: Does the IDT71V416S10BEI8 have any built-in error correction capabilities? A: No, it does not have built-in error correction capabilities. Additional error correction techniques may need to be implemented if required.

  10. Q: Is the IDT71V416S10BEI8 available in different package options? A: Yes, it is available in various package options such as 44-pin TSOP and 48-ball TFBGA, providing flexibility for different system designs.

Please note that the answers provided here are general and may vary depending on specific requirements and datasheet specifications.