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IDT71V416S12YI

IDT71V416S12YI

Product Overview

Category

The IDT71V416S12YI belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This chip is primarily used for high-speed data storage and retrieval in various electronic devices.

Characteristics

  • High-speed operation
  • Low power consumption
  • Non-volatile memory
  • Reliable performance
  • Wide temperature range compatibility

Package

The IDT71V416S12YI is available in a compact and industry-standard 44-pin TSOP (Thin Small Outline Package).

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval, making it suitable for applications that require high-speed processing.

Packaging/Quantity

The IDT71V416S12YI is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the supplier.

Specifications

  • Memory Size: 4 Megabits (4Mbit)
  • Organization: 512K words x 8 bits
  • Supply Voltage: 3.3V ± 0.3V
  • Access Time: 12 ns
  • Operating Temperature Range: -40°C to +85°C
  • Standby Current: 10 µA (typical)
  • Package Type: 44-pin TSOP

Detailed Pin Configuration

The IDT71V416S12YI has a total of 44 pins, each serving a specific function. The pin configuration is as follows:

  1. VCC
  2. A11
  3. A9
  4. A8
  5. A13
  6. A14
  7. A12
  8. A7
  9. A6
  10. A5
  11. A4
  12. A3
  13. A2
  14. A1
  15. A0
  16. DQ0
  17. DQ1
  18. DQ2
  19. DQ3
  20. DQ4
  21. DQ5
  22. DQ6
  23. DQ7
  24. WE#
  25. OE#
  26. CE#
  27. UB#
  28. LB#
  29. A10
  30. A15
  31. A16
  32. A17
  33. A18
  34. A19
  35. A20
  36. A21
  37. A22
  38. A23
  39. VSS
  40. NC
  41. NC
  42. NC
  43. NC
  44. VCC

Functional Features

  • High-speed data access and retrieval
  • Non-volatile memory storage
  • Low power consumption in standby mode
  • Easy integration into various electronic systems
  • Reliable performance in a wide temperature range

Advantages and Disadvantages

Advantages

  • Fast operation for efficient data processing
  • Low power consumption, making it suitable for portable devices
  • Reliable performance in extreme temperature conditions
  • Easy integration into existing electronic systems

Disadvantages

  • Limited memory size compared to other storage options
  • Higher cost per unit compared to some alternative technologies

Working Principles

The IDT71V416S12YI operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The chip uses a combination of transistors and capacitors to store and retrieve data quickly.

Detailed Application Field Plans

The IDT71V416S12YI finds applications in various fields where high-speed data storage and retrieval are crucial. Some potential application areas include:

  1. Networking equipment
  2. Telecommunications devices
  3. Industrial automation systems
  4. Medical equipment
  5. Automotive electronics

Detailed and Complete Alternative Models

  1. IDT71V416L12YI: Similar to the IDT71V416S12YI, but with a lower access time of 12 ns.
  2. IDT71V416S15YI: Similar to the IDT71V416S12YI, but with a higher access time of 15 ns.
  3. IDT71V416L15YI: Similar to the IDT71V416S12YI, but with a lower access time of 15 ns.

These alternative models offer similar functionality with slight variations in access time, allowing users to choose the most suitable option for their specific requirements.

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技術ソリューションにおける IDT71V416S12YI の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V416S12YI in technical solutions:

  1. Q: What is IDT71V416S12YI? A: IDT71V416S12YI is a high-speed, low-power CMOS static RAM (SRAM) device with a capacity of 4 Megabits (Mbit).

  2. Q: What are the key features of IDT71V416S12YI? A: Some key features include a 12 ns access time, asynchronous operation, low power consumption, and a wide operating voltage range.

  3. Q: How can IDT71V416S12YI be used in technical solutions? A: It can be used as a memory component in various applications such as embedded systems, networking equipment, telecommunications, and industrial automation.

  4. Q: What is the operating voltage range for IDT71V416S12YI? A: The operating voltage range is typically between 4.5V and 5.5V.

  5. Q: Does IDT71V416S12YI support asynchronous operation? A: Yes, it supports asynchronous operation, which means that it does not require a clock signal for data transfer.

  6. Q: What is the access time of IDT71V416S12YI? A: The access time is 12 ns, which refers to the time it takes for the device to output valid data after receiving an address.

  7. Q: Can IDT71V416S12YI operate at low power? A: Yes, IDT71V416S12YI is designed to operate at low power, making it suitable for battery-powered devices or energy-efficient applications.

  8. Q: Is IDT71V416S12YI a volatile or non-volatile memory device? A: IDT71V416S12YI is a volatile memory device, meaning that its data is lost when power is removed.

  9. Q: What is the package type for IDT71V416S12YI? A: IDT71V416S12YI is available in a 44-pin TSOP (Thin Small Outline Package) form factor.

  10. Q: Can IDT71V416S12YI be used as a drop-in replacement for other SRAM devices? A: Yes, IDT71V416S12YI is designed to be pin-compatible with other 4Mbit SRAM devices, making it easy to replace them in existing designs.

Please note that these answers are general and may vary depending on the specific application and requirements.