IDT71V416S15Y

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
• Package: 44-pin Plastic TSOP II
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Size: 4 Megabits (4M x 16)
• Operating Voltage: 3.3V
• Access Time: 15 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 1 μA
• Package Dimensions: 12.8mm x 20.4mm x 1.2mm

Pin Configuration

The IDT71V416S15Y has a total of 44 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. A8
10. A9
11. A10
12. A11
13. A12
14. A13
15. A14
16. A15
17. VCC
18. OE#
19. WE#
20. I/O0
21. I/O1
22. I/O2
23. I/O3
24. I/O4
25. I/O5
26. I/O6
27. I/O7
28. I/O8
29. I/O9
30. I/O10
31. I/O11
32. I/O12
33. I/O13
34. I/O14
35. I/O15
36. GND
37. NC
38. NC
39. NC
40. VCC
41. CE#
42. UB#
43. LB#
44. NC

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and synchronized data transfers.
• Easy integration into existing circuit designs due to standard pin configuration.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low standby current prolongs battery life in portable devices. - Reliable performance ensures data integrity. - Standard package allows for easy integration into various applications.

Disadvantages: - Limited memory size may not be sufficient for certain applications. - Higher cost compared to other memory technologies. - Sensitivity to electrical noise may require additional precautions during design.

Working Principles

The IDT71V416S15Y is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates at a voltage of 3.3V and provides a fast access time of 15 ns. The device uses an address bus (A0-A15) to specify the location of the data to be read or written. The control signals, such as OE# (Output Enable) and WE# (Write Enable), determine the type of operation performed.

During a read operation, the selected data is output on the I/O pins. In a write operation, data is input through the I/O pins and stored in the specified memory location. The device also features chip enable signals (CE#) for enabling or disabling the memory chip.

Detailed Application Field Plans

The IDT71V416S15Y is commonly used in various applications that require fast and reliable data storage and retrieval. Some of the potential application fields include:

1. Computer Systems: Used as cache memory or main memory in computer systems to enhance performance.
2. Networking Equipment: Employed in routers, switches, and network cards for buffering and temporary data storage.
3. Telecommunications: Utilized in communication devices for storing voice and data packets.
4. Industrial Control Systems: Integrated into control units for real-time data processing and storage.
5. Automotive Electronics: Incorporated in automotive systems for storing critical data and firmware.

Detailed and Complete Alternative Models

1. IDT71V416S10PHG - 4 Megabit (4M x 16) Synchronous SRAM with a 10 ns access time.
2. IDT71V416L12PHG - 4 Megabit (4M x 16) Low-power Synchronous SRAM with a 12 ns access time.
3. IDT71V416S20PHG - 4 Megabit (4M x 16) Synchronous SRAM with a 20 ns access time.

These alternative