IDT71V416VL10PHG8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 4 Megabits (4M x 16 bits)
• Access Time: 10 nanoseconds (ns)
• Operating Voltage: 3.3 volts (V)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 20 years
• Interface: Synchronous

Pin Configuration

The IDT71V416VL10PHG8 has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VCCQ
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. OE#
37. WE#
38. CE#
39. UB#
40. LB#
41. CLK
42. VCC
43. GND
44. NC

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous interface ensures reliable and efficient communication with the device.
• Data retention capability of over 20 years ensures long-term storage of critical information.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption extends battery life in portable devices. - Reliable data retention ensures data integrity over extended periods. - Synchronous interface simplifies communication with other components.

Disadvantages: - Limited memory size may not be sufficient for certain applications. - Higher cost compared to other memory technologies. - Vulnerable to electromagnetic interference (EMI) due to its high-speed operation.

Working Principles

The IDT71V416VL10PHG8 is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address signals, control signals, and data signals from the host device. The address signals specify the location in memory where data needs to be read from or written to. The control signals manage the timing and sequencing of operations, such as enabling or disabling the memory chip. The data signals carry the actual information being stored or retrieved.

Detailed Application Field Plans

The IDT71V416VL10PHG8 is commonly used in various electronic devices that require fast and reliable data storage and retrieval capabilities. Some of the typical application fields include:

1. Computer systems - Used as cache memory or main memory in desktops, laptops, and servers.
2. Networking equipment - Provides data buffering and packet storage in routers, switches, and network appliances.
3. Telecommunications devices - Used for call processing, signaling, and data storage in telecommunication infrastructure.
4. Consumer electronics - Found in gaming consoles, set-top boxes, digital cameras, and other multimedia devices.
5. Industrial automation - Utilized in control systems, robotics, and process monitoring equipment.

Detailed and Complete Alternative Models

1. IDT71V416S - Similar to IDT71V416VL10PHG8 but operates at a different voltage range (5V).
2. IDT71V416YL - Offers lower power consumption and extended temperature range compared to IDT71V416VL10PHG8.
3. IDT71V416SA - Provides additional features such as burst mode operation and multiple chip enable inputs.

These alternative models offer similar functionality and can be considered based on specific application requirements.

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