IDT71V416VL12BE8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Part Number: IDT71V416VL12BE8
• Organization: 4 Meg x 16
• Voltage: 3.3V
• Access Time: 12ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years
• Power Supply: Single power supply of 3.3V ± 0.3V
• Standby Current: 20mA (max)
• Active Current: 100mA (max)

Pin Configuration

The IDT71V416VL12BE8 has a total of 44 pins. The pin configuration is as follows:

1. A0-A19: Address Inputs
2. DQ0-DQ15: Data Inputs/Outputs
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. UB#/LB#: Upper Byte/Lower Byte Enable Inputs
7. VCC: Power Supply
8. GND: Ground

Functional Features

• High-speed operation: The IDT71V416VL12BE8 offers fast access times, allowing for quick data retrieval.
• Low-power consumption: It operates at a low voltage and consumes minimal power, making it suitable for battery-powered devices.
• Synchronous operation: The memory device synchronizes with the system clock, ensuring efficient data transfer.
• Easy integration: The IC can be easily integrated into various electronic systems due to its standard pin configuration and package.

Advantages

• Fast access times enable rapid data processing.
• Low-power consumption prolongs battery life in portable devices.
• Synchronous operation ensures efficient data transfer.
• Easy integration simplifies the design process.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per bit compared to larger memory modules.
• Vulnerable to data loss in case of power failure without proper backup mechanisms.

Working Principles

The IDT71V416VL12BE8 is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address inputs, which specify the location of the data to be accessed. The chip enable (CE#) signal activates the device, while the write enable (WE#) and output enable (OE#) signals control the read and write operations. The data inputs/outputs (DQ0-DQ15) transmit information between the memory and the external system.

Application Field Plans

The IDT71V416VL12BE8 is commonly used in various applications, including:

1. Computer Systems: Used as cache memory or main memory in computer systems to enhance performance.
2. Networking Equipment: Employed in routers, switches, and network cards for fast data buffering.
3. Telecommunications: Utilized in base stations, switches, and communication equipment for data storage and retrieval.
4. Consumer Electronics: Integrated into gaming consoles, set-top boxes, and digital cameras for data storage purposes.
5. Automotive Electronics: Used in automotive systems for storing critical data and firmware updates.

Alternative Models

1. Micron MT48LC4M16A2P-7E
2. Samsung K6R4016V1D-UI10
3. Cypress CY62157EV30LL-45ZSXI

These alternative models offer similar specifications and functionality to the IDT71V416VL12BE8 and can be considered as alternatives based on specific requirements.

In conclusion, the IDT71V416VL12BE8 is a high-speed, low-power synchronous SRAM that provides reliable data storage and retrieval capabilities. Its easy integration, fast access times, and low-power consumption make it suitable for various applications in computer systems, networking equipment, telecommunications, consumer electronics, and automotive electronics.