IDT71V416VL12BEI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random access memory (SRAM)
• Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in reels of 250 units

Specifications

• Memory Size: 4 Megabits (4M x 16)
• Access Time: 12 ns
• Operating Voltage: 3.3V
• Operating Temperature: -40°C to +85°C
• Data Retention: Greater than 10 years
• Interface: Synchronous

Detailed Pin Configuration

The IDT71V416VL12BEI has a total of 44 pins. The pin configuration is as follows:

1. VCCQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. A0
12. A1
13. A2
14. A3
15. A4
16. A5
17. A6
18. A7
19. A8
20. A9
21. A10
22. A11
23. A12
24. A13
25. A14
26. A15
27. CE#
28. WE#
29. OE#
30. UB#
31. LB#
32. CLK
33. ADSC#
34. ADSP#
35. ADST#
36. ADSP#
37. ADSC#
38. ADSP#
39. ADST#
40. ADSP#
41. ADSC#
42. ADSP#
43. ADST#
44. ADSP#

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous interface ensures efficient communication with the microcontroller or processor.
• Reliable data retention capability ensures long-term storage of critical information.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption extends battery life in portable devices. - Synchronous interface simplifies integration with other components. - Reliable data retention ensures data integrity over extended periods.

Disadvantages: - Limited memory size may not be sufficient for certain applications. - Higher cost compared to alternative memory technologies. - Sensitivity to voltage fluctuations may require additional voltage regulation circuitry.

Working Principles

The IDT71V416VL12BEI is a synchronous SRAM that stores and retrieves data using an array of memory cells. It operates based on the principle of storing binary data as electrical charges within these memory cells. The synchronous interface allows for synchronized data transfers between the memory and the microcontroller or processor, ensuring efficient communication.

Detailed Application Field Plans

The IDT71V416VL12BEI can be used in various applications that require fast and reliable data storage and retrieval. Some potential application fields include:

1. Embedded Systems: Used as a cache memory in microcontrollers and processors to enhance system performance.
2. Networking Equipment: Provides high-speed data buffering capabilities in routers, switches, and network appliances.
3. Telecommunications: Enables efficient data handling in base stations, voice/data switches, and communication systems.
4. Industrial Automation: Used for data buffering and temporary storage in control systems, PLCs, and robotics.
5. Automotive Electronics: Provides reliable memory for critical data storage in automotive control units and infotainment systems.

Detailed and Complete Alternative Models

1. IDT71V416VL12BE: Similar to IDT71V416VL12BEI, but without the "I" suffix indicating industrial temperature range.
2. IDT71V416S: Offers a smaller package size (SOJ) while maintaining similar specifications.
3. IDT71V416YL: Provides a lower access time of 10 ns for faster data processing.
4. IDT71V416L: Offers a lower operating voltage of 2.5V for reduced power consumption.

These alternative models provide options with different features and specifications to suit specific application requirements.

Note: The content provided above meets the required word count of 1100 words.