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IDT71V416VS15Y8

IDT71V416VS15Y8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 44-pin Very Small Outline Package (VSOP)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Typically sold in reels of 250 units

Specifications

  • Organization: 4 Meg x 16
  • Voltage Range: 3.0V - 3.6V
  • Access Time: 15 ns
  • Operating Temperature Range: -40°C to +85°C
  • Standby Current: 10 µA (typical)
  • Package Dimensions: 10.2mm x 17.8mm

Detailed Pin Configuration

The IDT71V416VS15Y8 has a total of 44 pins. The pin configuration is as follows:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSSQ
  11. WE#
  12. CAS#
  13. RAS#
  14. A0
  15. A1
  16. A2
  17. A3
  18. A4
  19. A5
  20. A6
  21. A7
  22. A8
  23. A9
  24. A10
  25. A11
  26. A12
  27. A13
  28. A14
  29. A15
  30. A16
  31. A17
  32. A18
  33. A19
  34. A20
  35. A21
  36. A22
  37. A23
  38. VDD
  39. CLK
  40. CKE
  41. CS#
  42. DQM#
  43. DQ8
  44. DQ9

Functional Features

  • High-speed operation: The IDT71V416VS15Y8 offers a fast access time of 15 ns, allowing for quick data retrieval.
  • Low-power consumption: With a standby current of only 10 µA, this memory device helps conserve energy.
  • Synchronous operation: The device synchronizes its operations with an external clock signal, ensuring reliable data transfer.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low-power consumption reduces energy usage. - Synchronous operation ensures reliable data transfer.

Disadvantages: - Limited storage capacity (4 Meg x 16). - Higher cost compared to other memory devices with lower specifications.

Working Principles

The IDT71V416VS15Y8 is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address signals from the system, which specify the location of the data to be accessed. The device then reads or writes the data based on the control signals provided. The synchronous nature of the SRAM ensures that data transfers occur in sync with an external clock signal, enhancing reliability and performance.

Detailed Application Field Plans

The IDT71V416VS15Y8 is commonly used in various applications, including:

  1. Computer systems: Used as cache memory to provide fast access to frequently accessed data.
  2. Networking equipment: Enables high-speed data buffering and packet processing.
  3. Telecommunications devices: Facilitates data storage and retrieval in communication systems.
  4. Industrial automation: Supports real-time data processing and control in manufacturing processes.
  5. Automotive electronics: Used in advanced driver assistance systems (ADAS) and infotainment systems.

Detailed and Complete Alternative Models

  1. IDT71V416L: Low-power variant of the IDT71V416VS15Y8 with similar specifications.
  2. IDT71V416S: Higher-speed variant with a faster access time of 10 ns.
  3. IDT71V416VL: Very low-power variant designed for battery-powered devices.
  4. IDT71V416Z: Extended temperature range variant suitable for harsh environments.

(Note: This list is not exhaustive and there may be other alternative models available in the market.)

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技術ソリューションにおける IDT71V416VS15Y8 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V416VS15Y8 in technical solutions:

  1. Q: What is IDT71V416VS15Y8? A: IDT71V416VS15Y8 is a high-speed, low-power CMOS static RAM (SRAM) chip with a capacity of 4 Megabits (Mbit).

  2. Q: What are the key features of IDT71V416VS15Y8? A: Some key features include a 15 ns access time, 3.3V power supply, asynchronous operation, and a 32K x 16-bit organization.

  3. Q: What are the typical applications of IDT71V416VS15Y8? A: IDT71V416VS15Y8 is commonly used in networking equipment, telecommunications systems, industrial automation, and other high-performance applications that require fast and reliable memory.

  4. Q: Can IDT71V416VS15Y8 be used as a cache memory? A: Yes, IDT71V416VS15Y8 can be used as a cache memory due to its fast access time and high-speed operation.

  5. Q: What is the operating voltage range for IDT71V416VS15Y8? A: The operating voltage range for IDT71V416VS15Y8 is typically between 3.0V and 3.6V.

  6. Q: Does IDT71V416VS15Y8 support multiple read/write operations simultaneously? A: No, IDT71V416VS15Y8 does not support simultaneous multiple read/write operations. It operates in an asynchronous mode.

  7. Q: Can IDT71V416VS15Y8 be used in battery-powered devices? A: Yes, IDT71V416VS15Y8 is suitable for battery-powered devices as it operates at a low power supply voltage of 3.3V.

  8. Q: What is the package type for IDT71V416VS15Y8? A: IDT71V416VS15Y8 is available in a 44-pin TSOP (Thin Small Outline Package) form factor.

  9. Q: Does IDT71V416VS15Y8 have any built-in error correction capabilities? A: No, IDT71V416VS15Y8 does not have built-in error correction capabilities. It is a standard SRAM chip.

  10. Q: Can IDT71V416VS15Y8 be used in high-temperature environments? A: Yes, IDT71V416VS15Y8 has a wide operating temperature range of -40°C to +85°C, making it suitable for use in high-temperature environments.

Please note that these answers are based on general information and may vary depending on specific implementation requirements.