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IDT71V416YL12Y8

IDT71V416YL12Y8

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 44-pin Thin Small Outline Package (TSOP)
  • Essence: Stores and retrieves digital information in electronic systems
  • Packaging/Quantity: Available in reels of 250 units

Specifications

  • Part Number: IDT71V416YL12Y8
  • Organization: 4 Meg x 16
  • Voltage Range: 3.0V - 3.6V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: 100 years
  • Power Supply Current: 80 mA (typical)

Detailed Pin Configuration

The IDT71V416YL12Y8 has a total of 44 pins. The pin configuration is as follows:

  1. VCCQ
  2. DQ15
  3. DQ14
  4. DQ13
  5. DQ12
  6. DQ11
  7. DQ10
  8. DQ9
  9. DQ8
  10. GND
  11. DQ7
  12. DQ6
  13. DQ5
  14. DQ4
  15. DQ3
  16. DQ2
  17. DQ1
  18. DQ0
  19. VSSQ
  20. WE#
  21. OE#
  22. A0
  23. A1
  24. A2
  25. A3
  26. A4
  27. A5
  28. A6
  29. A7
  30. A8
  31. A9
  32. A10
  33. A11
  34. A12
  35. A13
  36. A14
  37. A15
  38. VCC
  39. CE#
  40. UB#
  41. LB#
  42. CLK
  43. CLKEN#
  44. VSS

Functional Features

  • High-speed operation: The IDT71V416YL12Y8 offers fast access times, allowing for efficient data retrieval and storage.
  • Low-power consumption: This memory device is designed to minimize power consumption, making it suitable for battery-powered devices.
  • Synchronous operation: The device synchronizes its operations with an external clock signal, ensuring reliable data transfer.
  • Easy integration: The 44-pin TSOP package allows for easy integration into electronic systems.

Advantages and Disadvantages

Advantages: - High-speed operation enables quick data access. - Low-power consumption prolongs battery life in portable devices. - Synchronous operation ensures reliable data transfer. - Easy integration due to the compact TSOP package.

Disadvantages: - Limited storage capacity compared to other memory devices. - Higher cost per unit compared to some alternative models.

Working Principles

The IDT71V416YL12Y8 is a synchronous SRAM that stores digital information using flip-flops. It operates by receiving address inputs, control signals, and data inputs from an external system. The device uses an internal clock signal to synchronize its operations. When a read operation is initiated, the addressed data is retrieved and made available on the output pins. Similarly, during a write operation, the input data is stored at the specified address location.

Detailed Application Field Plans

The IDT71V416YL12Y8 is commonly used in various applications, including:

  1. Computer Systems: Used as cache memory or main memory in computer systems to provide fast data access.
  2. Networking Equipment: Employed in routers, switches, and network cards to store routing tables and buffer data packets.
  3. Telecommunications: Used in base stations, switches, and communication devices to store call data and control information.
  4. Industrial Control Systems: Utilized in automation systems, PLCs, and robotics for storing program code and data.
  5. Consumer Electronics: Found in gaming consoles, set-top boxes, and digital TVs for fast data storage and retrieval.

Detailed and Complete Alternative Models

  1. IDT71V416S
  2. IDT71V416L
  3. IDT71V416A
  4. IDT71V416B
  5. IDT71V416C

These alternative models offer similar functionality and specifications to the IDT71V416YL12Y8, providing options for different application requirements.

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技術ソリューションにおける IDT71V416YL12Y8 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V416YL12Y8 in technical solutions:

  1. Question: What is the IDT71V416YL12Y8?
    Answer: The IDT71V416YL12Y8 is a high-speed, low-power CMOS static RAM (SRAM) with a capacity of 4 megabits (Mbit).

  2. Question: What is the operating voltage range for the IDT71V416YL12Y8?
    Answer: The IDT71V416YL12Y8 operates at a voltage range of 3.0V to 3.6V.

  3. Question: What is the access time of the IDT71V416YL12Y8?
    Answer: The access time of the IDT71V416YL12Y8 is 12 nanoseconds (ns).

  4. Question: Can the IDT71V416YL12Y8 be used in battery-powered devices?
    Answer: Yes, the IDT71V416YL12Y8 is designed to operate at low power, making it suitable for battery-powered devices.

  5. Question: What is the pin configuration of the IDT71V416YL12Y8?
    Answer: The IDT71V416YL12Y8 has a 44-pin TSOP-II package with a specific pin configuration for data input/output, address lines, control signals, and power supply.

  6. Question: Is the IDT71V416YL12Y8 compatible with other SRAMs?
    Answer: Yes, the IDT71V416YL12Y8 follows industry-standard SRAM architecture and interface, making it compatible with other SRAMs.

  7. Question: Can the IDT71V416YL12Y8 be used in high-speed applications?
    Answer: Yes, the IDT71V416YL12Y8 has a fast access time and is suitable for high-speed applications such as networking equipment and telecommunications.

  8. Question: Does the IDT71V416YL12Y8 support burst mode operation?
    Answer: Yes, the IDT71V416YL12Y8 supports burst mode operation, allowing for efficient data transfer in burst read or write operations.

  9. Question: What is the standby current consumption of the IDT71V416YL12Y8?
    Answer: The standby current consumption of the IDT71V416YL12Y8 is very low, making it energy-efficient during idle periods.

  10. Question: Can the IDT71V416YL12Y8 be used in industrial temperature environments?
    Answer: Yes, the IDT71V416YL12Y8 is designed to operate in a wide temperature range, including industrial temperature environments.

Please note that these answers are general and may vary depending on the specific application and requirements.