IDT71V416YS12Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static RAM (SRAM)
• Package: 44-pin TSOP (Thin Small Outline Package)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Size: 4 Megabits (4M x 16)
• Access Time: 12 nanoseconds
• Operating Voltage: 3.3 volts
• Organization: 4 banks of 1M x 16
• Interface: Synchronous
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71V416YS12Y8 has a total of 44 pins. The pin configuration is as follows:

1. VCCQ - Power supply for output buffers
2. DQ0-DQ15 - Data input/output pins
3. A0-A19 - Address input pins
4. WE - Write Enable
5. OE - Output Enable
6. UB/LB - Upper Byte/Lower Byte control
7. CE1, CE2 - Chip Enable inputs
8. CLK - Clock input
9. GND - Ground

(Note: The remaining pins are not listed here for brevity)

Functional Features

• High-speed operation allows for quick data access and transfer
• Low-power consumption ensures efficient use of energy
• Synchronous interface enables synchronized communication with the system
• Four banks provide flexibility in memory organization and access
• Reliable data storage and retrieval capabilities ensure data integrity

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance - Low power consumption reduces energy costs - Synchronous interface simplifies system design and integration - Multiple banks offer flexibility in memory organization

Disadvantages: - Limited memory size (4 Megabits) - Higher cost compared to other memory technologies - Requires careful handling due to sensitivity to electrostatic discharge (ESD)

Working Principles

The IDT71V416YS12Y8 is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address inputs, which specify the location of the data to be accessed. The data is then read from or written to the specified memory location based on control signals such as Write Enable (WE) and Output Enable (OE). The synchronous nature of the device ensures that data transfers are synchronized with the system clock.

Detailed Application Field Plans

The IDT71V416YS12Y8 is commonly used in various applications that require high-speed and reliable data storage. Some potential application fields include:

1. Computer Systems: Used as cache memory or main memory in desktops, laptops, and servers.
2. Networking Equipment: Employed in routers, switches, and network appliances for buffering and packet processing.
3. Telecommunications: Utilized in base stations, voice/data switches, and communication infrastructure for fast data access.
4. Industrial Control Systems: Integrated into PLCs (Programmable Logic Controllers), robotics, and automation systems for data storage and retrieval.
5. Automotive Electronics: Incorporated in automotive control units, infotainment systems, and advanced driver-assistance systems (ADAS) for efficient data handling.

Detailed and Complete Alternative Models

1. IDT71V416L - Low-power variant of IDT71V416YS12Y8 with similar specifications.
2. IDT71V416S - High-speed variant with faster access time but higher power consumption.
3. IDT71V416Z - Extended temperature range variant suitable for harsh environments.
4. IDT71V416X - Higher density variant with 8 Megabits (8M x 16) memory size.

(Note: The list of alternative models can be expanded based on specific requirements and availability in the market.)

This concludes the encyclopedia entry for the IDT71V416YS12Y8, providing comprehensive information about its product details, specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.