IDT71V416YS12YI8

Product Overview

Category

The IDT71V416YS12YI8 belongs to the category of semiconductor memory devices.

Use

It is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable data retention
• Easy integration into various electronic systems

Package

The IDT71V416YS12YI8 is available in a compact and durable package, designed to protect the internal components from external factors such as moisture and physical damage.

Essence

The essence of the IDT71V416YS12YI8 lies in its ability to provide fast and reliable data storage and retrieval, making it an essential component in many electronic devices.

Packaging/Quantity

The IDT71V416YS12YI8 is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in quantities suitable for both small-scale and large-scale production.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 4 Meg x 16
• Operating Voltage: 3.3V
• Access Time: 12 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Package Type: 44-pin TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The IDT71V416YS12YI8 has a total of 44 pins, each serving a specific function. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. GND
27. WE#
28. OE#
29. CE#
30. UB#
31. LB#
32. BYTE#
33. NC
34. VCC
35. VCC
36. VCC
37. VCC
38. VCC
39. VCC
40. VCC
41. VCC
42. VCC
43. VCC
44. VCC

Functional Features

• High-speed data access and retrieval
• Low power consumption during standby mode
• Easy integration into various electronic systems
• Reliable data retention even in harsh environmental conditions
• Compatibility with standard parallel interfaces

Advantages

• Fast access time allows for efficient data processing
• Large storage capacity meets the demands of modern applications
• Low power consumption prolongs battery life in portable devices
• Easy integration simplifies the design process for electronic systems
• Reliable data retention ensures data integrity over extended periods

Disadvantages

• Higher cost compared to other memory technologies
• Limited scalability in terms of storage capacity
• Susceptible to electromagnetic interference (EMI)
• Requires additional circuitry for interfacing with other components

Working Principles

The IDT71V416YS12YI8 operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store each bit of data, allowing for fast and direct access. The data is retained as long as power is supplied to the device.

Detailed Application Field Plans

The IDT71V416YS12YI8 finds applications in various electronic systems, including but not limited to:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial control systems
5. Automotive electronics
6. Consumer electronics

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-UI10
2. Micron MT45W4MW16BCGB-708 WT
3. Cypress CY7C1041CV33-15ZSXE
4. Renesas R1LV0416DSB-7SI#B0
5. Nanya NT5DS16M16CS-5T

These alternative models offer similar functionality and specifications to the IDT71V416YS12YI8, providing options for different design requirements and availability from various manufacturers.

In conclusion, the IDT71V416YS12YI8 is a high-performance SRAM memory device that offers fast access times, large storage capacity, and low power consumption. Its reliability and compatibility make it suitable for a wide range