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IDT71V416YS15PHI

IDT71V416YS15PHI

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory device
  • Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
  • Package: 44-pin plastic thin small outline package (TSOP)
  • Essence: Provides fast and reliable data storage and retrieval capabilities
  • Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

  • Memory Type: Synchronous SRAM
  • Density: 4 Megabits (4M x 1)
  • Access Time: 15 nanoseconds
  • Operating Voltage: 3.3 volts
  • Operating Temperature: -40°C to +85°C
  • Data Retention: Greater than 10 years
  • Interface: Parallel

Detailed Pin Configuration

The IDT71V416YS15PHI has a total of 44 pins. The pin configuration is as follows:

  1. VCCQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. GND
  11. A0
  12. A1
  13. A2
  14. A3
  15. A4
  16. A5
  17. A6
  18. A7
  19. A8
  20. A9
  21. A10
  22. A11
  23. A12
  24. A13
  25. A14
  26. A15
  27. A16
  28. A17
  29. A18
  30. A19
  31. A20
  32. A21
  33. A22
  34. A23
  35. A24
  36. A25
  37. A26
  38. A27
  39. A28
  40. A29
  41. A30
  42. A31
  43. WE#
  44. OE#

Functional Features

  • High-speed operation allows for quick data access and retrieval.
  • Low-power consumption makes it suitable for battery-powered devices.
  • Synchronous design ensures reliable and synchronized data transfers.
  • Easy integration into existing circuitry due to its parallel interface.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Synchronous design ensures reliable data transfer. - Parallel interface simplifies integration into existing systems.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per bit compared to alternative memory options. - Requires additional control signals for read and write operations.

Working Principles

The IDT71V416YS15PHI operates as a synchronous SRAM, utilizing a parallel interface for data transfer. It stores and retrieves data based on the address provided by the system. The device is controlled by various control signals such as Write Enable (WE#) and Output Enable (OE#), which determine the read and write operations. The synchronous design ensures that data transfers are synchronized with the system clock, allowing for reliable and efficient operation.

Detailed Application Field Plans

The IDT71V416YS15PHI is commonly used in applications that require fast and reliable data storage and retrieval capabilities. Some of the specific application fields include:

  1. Embedded Systems: Used in microcontrollers and digital signal processors (DSPs) to store program code and data.
  2. Networking Equipment: Employed in routers, switches, and network cards for buffering and caching purposes.
  3. Telecommunications: Utilized in base stations, voice/data switches, and communication infrastructure for data buffering.
  4. Industrial Automation: Integrated into control systems and PLCs to store critical data and program instructions.
  5. Consumer Electronics: Found in gaming consoles, set-top boxes, and digital cameras for temporary data storage.

Detailed and Complete Alternative Models

  1. IDT71V416S: Similar to IDT71V416YS15PHI but operates at a different access time of 10 nanoseconds.
  2. IDT71V416L: Low-power variant of IDT71V416YS15PHI with reduced power consumption.
  3. IDT71V416Z: Higher-density version with 16 Megabits (4M x 4) capacity.
  4. IDT71V416X: Extended temperature range variant suitable for harsh environments.

These alternative models offer variations in terms of access time, power consumption, density, and temperature range to cater to specific application requirements.

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技術ソリューションにおける IDT71V416YS15PHI の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V416YS15PHI in technical solutions:

  1. Q: What is IDT71V416YS15PHI? A: IDT71V416YS15PHI is a specific model of synchronous static random-access memory (SRAM) chip manufactured by Integrated Device Technology (IDT).

  2. Q: What is the capacity of IDT71V416YS15PHI? A: The IDT71V416YS15PHI has a capacity of 4 megabits (4Mb) or 512 kilobytes (512KB).

  3. Q: What is the operating voltage range for IDT71V416YS15PHI? A: The operating voltage range for IDT71V416YS15PHI is typically between 3.0V and 3.6V.

  4. Q: What is the access time of IDT71V416YS15PHI? A: The access time of IDT71V416YS15PHI is 15 nanoseconds (ns), hence the "15" in its part number.

  5. Q: What is the package type for IDT71V416YS15PHI? A: IDT71V416YS15PHI comes in a 44-pin plastic thin small outline package (TSOP).

  6. Q: What is the temperature range for IDT71V416YS15PHI? A: The temperature range for IDT71V416YS15PHI is typically between -40°C and +85°C.

  7. Q: Can IDT71V416YS15PHI be used in battery-powered devices? A: Yes, IDT71V416YS15PHI can be used in battery-powered devices as it operates within the typical voltage range of such devices.

  8. Q: Is IDT71V416YS15PHI suitable for high-speed applications? A: Yes, IDT71V416YS15PHI has a relatively fast access time of 15ns, making it suitable for many high-speed applications.

  9. Q: Can IDT71V416YS15PHI be used in industrial environments? A: Yes, IDT71V416YS15PHI is designed to operate within a wide temperature range, making it suitable for industrial environments.

  10. Q: Are there any specific design considerations when using IDT71V416YS15PHI? A: It is important to ensure proper power supply decoupling and signal integrity measures when designing with IDT71V416YS15PHI to ensure reliable operation.

Please note that these answers are general and may vary depending on the specific requirements and use cases.