IDT71V424L12Y8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin plastic thin small outline package (TSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Organization: 4 Meg x 4
• Voltage Range: 3.0V - 3.6V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10 µA (typical)
• Package Dimensions: 10.2mm x 18.4mm x 1.15mm

Detailed Pin Configuration

The IDT71V424L12Y8 has a total of 44 pins, which are assigned specific functions as follows:

1. VCCQ - Power supply for output buffers
2. DQ0-DQ3 - Data input/output pins
3. A0-A19 - Address input pins
4. WE - Write Enable pin
5. OE - Output Enable pin
6. CE1, CE2 - Chip Enable pins
7. UB/LB - Upper Byte/Lower Byte control pins
8. CLK - Clock input pin
9. GND - Ground pin

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed operation: The IDT71V424L12Y8 offers a fast access time of 12 ns, allowing for quick data retrieval.
• Low power consumption: With a standby current of only 10 µA, this SRAM minimizes power usage when not actively accessed.
• Synchronous operation: The device synchronizes its operations with an external clock signal (CLK), ensuring reliable data transfer.
• Easy integration: The 44-pin TSOP package allows for straightforward integration into various electronic systems.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Synchronous operation ensures reliable data transfer. - Compact package facilitates easy integration.

Disadvantages: - Limited storage capacity (4 Meg x 4). - Relatively higher cost compared to other memory technologies. - Vulnerable to data loss in case of power failure without proper backup measures.

Working Principles

The IDT71V424L12Y8 is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address inputs (A0-A19) to select a specific memory location, along with control signals (WE, OE, CE1, CE2, UB/LB) to manage read and write operations. The data is stored in the memory cells and can be accessed at high speeds when required.

Detailed Application Field Plans

The IDT71V424L12Y8 finds applications in various fields, including:

1. Computer Systems: Used as cache memory in CPUs to enhance data processing speed.
2. Networking Equipment: Employed in routers and switches for fast packet buffering.
3. Telecommunications: Utilized in base stations and network infrastructure for data storage.
4. Industrial Automation: Integrated into control systems for real-time data handling.
5. Automotive Electronics: Applied in advanced driver assistance systems (ADAS) for quick data retrieval.

Detailed and Complete Alternative Models

1. IDT71V416S - 4 Meg x 16 synchronous SRAM
2. IDT71V424S - 4 Meg x 4 synchronous SRAM with different pin configuration
3. IDT71V432S - 4 Meg x 32 synchronous SRAM with higher storage capacity
4. IDT71V416L - 4 Meg x 16 low-power synchronous SRAM

(Note: The list above includes only a few alternative models for reference.)

This concludes the encyclopedia entry for the IDT71V424L12Y8, providing comprehensive information about its product details, specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.