IDT71V424YS15PHI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed performance
  • Low power consumption
  • Large storage capacity
• Package: PHI8 package
• Essence: Non-volatile memory
• Packaging/Quantity: Individual units

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Density: 4 Megabits (Mbit)
• Organization: 512K words x 8 bits
• Access Time: 15 nanoseconds (ns)
• Operating Voltage: 3.3 volts (V)
• Operating Temperature: -40°C to +85°C
• Pin Count: 32 pins

Detailed Pin Configuration

The IDT71V424YS15PHI8 has a total of 32 pins, which are assigned specific functions as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ7 - Data inputs/outputs
4. WE - Write Enable
5. OE - Output Enable
6. CE - Chip Enable
7. UB/LB - Upper Byte/Lower Byte control
8. CLK - Clock input
9. NC - No connection (reserved)
10. GND - Ground

Functional Features

• High-speed access and data transfer
• Low power consumption for energy efficiency
• Non-volatile memory retains data even when power is lost
• Easy integration into various electronic systems
• Reliable performance with error detection and correction mechanisms

Advantages and Disadvantages

Advantages: - Fast access time allows for quick data retrieval - Low power consumption reduces energy costs - Large storage capacity accommodates extensive data requirements - Non-volatile memory ensures data retention during power interruptions

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited endurance due to finite write cycles - Susceptible to electromagnetic interference (EMI)

Working Principles

The IDT71V424YS15PHI8 is a static random access memory (SRAM) device. It stores data using flip-flop circuits, which retain information as long as power is supplied. The memory cells are organized in a matrix of rows and columns, with each cell storing one bit of data. Accessing the memory involves providing the appropriate address to select the desired row and column, enabling read or write operations.

Detailed Application Field Plans

The IDT71V424YS15PHI8 is widely used in various electronic systems that require high-speed and reliable data storage. Some common application fields include:

1. Computer Systems:

   • Cache memory
   • Buffer memory
   • Register files

2. Communication Systems:

   • Network routers
   • Switches
   • Data transmission devices

3. Industrial Control Systems:

   • Programmable Logic Controllers (PLCs)
   • Robotics
   • Process control units

4. Automotive Electronics:

   • Engine control units
   • Infotainment systems
   • Advanced driver-assistance systems (ADAS)

Detailed and Complete Alternative Models

1. IDT71V424S: Similar specifications but with a different package (SOJ32)
2. IDT71V424: Lower density version (2 Megabits) with similar characteristics
3. IDT71V416: Smaller capacity (1 Megabit) SRAM with comparable features
4. IDT71V432: Higher density (8 Megabits) SRAM with similar performance

These alternative models offer varying capacities and package options to suit different application requirements.

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