IDT71V546S100PFI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random access memory (SRAM)
• Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
• Essence: Provides high-performance data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (4Mbit)
• Organization: 512K words x 8 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 20 years
• Package Dimensions: 14mm x 22mm

Detailed Pin Configuration

The IDT71V546S100PFI8 has a total of 100 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. NC
12. A0
13. A1
14. A2
15. A3
16. A4
17. A5
18. A6
19. A7
20. A8
21. A9
22. A10
23. A11
24. A12
25. A13
26. A14
27. A15
28. A16
29. A17
30. A18
31. A19
32. A20
33. A21
34. A22
35. A23
36. A24
37. A25
38. A26
39. A27
40. A28
41. A29
42. A30
43. A31
44. A32
45. A33
46. A34
47. A35
48. A36
49. A37
50. A38
51. A39
52. A40
53. A41
54. A42
55. A43
56. A44
57. A45
58. A46
59. A47
60. A48
61. A49
62. A50
63. A51
64. A52
65. A53
66. A54
67. A55
68. A56
69. A57
70. A58
71. A59
72. A60
73. A61
74. A62
75. A63
76. A64
77. A65
78. A66
79. A67
80. A68
81. A69
82. A70
83. A71
84. A72
85. A73
86. A74
87. A75
88. A76
89. A77
90. A78
91. A79
92. A80
93. A81
94. A82
95. A83
96. A84
97. A85
98. A86
99. A87
100. VDDQ

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low-power consumption ensures efficient energy usage.
• Synchronous design enables synchronized data transfers.
• Static random access memory technology provides non-volatile storage capabilities.
• Easy integration with other components due to standard pin configuration.

Advantages and Disadvantages

Advantages: - High-speed operation allows for fast data processing. - Low-power consumption results in energy-efficient performance. - Synchronous design ensures synchronized data transfers. - Non-volatile storage capability ensures data retention even during power loss. - Standard pin configuration facilitates easy integration.

Disadvantages: - Limited storage capacity compared to higher-density memory devices. - Higher cost per bit compared to some other memory technologies. - Sensitivity to environmental conditions such as temperature and voltage fluctuations.

Working Principles

The IDT71V546S100PFI8 operates based on the principles of synchronous static random access memory (SRAM). It stores and retrieves data using a matrix of memory cells, which are organized into rows and columns. The memory cells retain their stored information as long as power is supplied to the device. Data is accessed by specifying the desired row and column addresses, allowing for quick retrieval and modification of stored information.

Detailed Application Field