IDT71V632S6PFI

Product Overview

Category: Integrated Circuit (IC)

Use: The IDT71V632S6PFI is a high-speed, low-power synchronous static random access memory (SRAM) designed for use in various electronic devices and systems. It provides fast and reliable data storage and retrieval capabilities.

Characteristics: - High-speed operation - Low power consumption - Synchronous interface - Large storage capacity - Reliable performance

Package: The IDT71V632S6PFI is available in a compact 48-pin plastic fine-pitch ball grid array (FBGA) package. This package offers excellent thermal and electrical properties, ensuring optimal performance and reliability.

Essence: The essence of the IDT71V632S6PFI lies in its ability to provide high-speed and low-power data storage solutions for electronic devices and systems.

Packaging/Quantity: Each package of IDT71V632S6PFI contains one IC.

Specifications

• Storage Capacity: 4 Megabits (512K x 8)
• Operating Voltage: 3.3V
• Access Time: 6 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years
• Package Type: 48-pin FBGA

Pin Configuration

The IDT71V632S6PFI has a total of 48 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. GND
11. A0
12. A1
13. A2
14. A3
15. A4
16. A5
17. A6
18. A7
19. A8
20. A9
21. A10
22. A11
23. A12
24. A13
25. A14
26. A15
27. A16
28. A17
29. A18
30. A19
31. A20
32. A21
33. A22
34. A23
35. A24
36. A25
37. A26
38. A27
39. A28
40. A29
41. A30
42. A31
43. WE#
44. OE#
45. CE#
46. UB#
47. LB#
48. VDDQ

Functional Features

The IDT71V632S6PFI offers the following functional features:

• High-speed synchronous operation: The SRAM operates synchronously with the system clock, allowing for fast and efficient data transfer.
• Low power consumption: The IC is designed to minimize power consumption, making it suitable for battery-powered devices and energy-efficient systems.
• Easy interface integration: The synchronous interface simplifies the integration of the SRAM into various electronic systems.
• Reliable performance: The IDT71V632S6PFI ensures reliable data storage and retrieval, meeting the demands of critical applications.

Advantages and Disadvantages

Advantages: - High-speed operation enables quick data access. - Low power consumption prolongs battery life. - Synchronous interface simplifies system integration. - Large storage capacity accommodates extensive data requirements. - Reliable performance ensures data integrity.

Disadvantages: - Limited storage capacity compared to higher-capacity memory options. - Higher cost per megabit compared to some alternative models.

Working Principles

The IDT71V632S6PFI operates based on the principles of synchronous static random access memory. It stores and retrieves data using an array of flip-flops, which retain their state until explicitly changed. The synchronous interface ensures that data transfers occur in synchronization with the system clock, allowing for efficient and reliable operation.

Application Field Plans

The IDT71V632S6PFI finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics - Consumer electronics

Alternative Models

For those seeking alternative models with similar specifications and features, the following options are available: 1. Micron MT45W4MW16BFB-708 WT 2. Samsung K6R4016V1D-UI10 3. Cypress CY7C1049DV33-10ZSXI

These alternatives offer comparable storage capacity, operating voltage, access time, and package type, providing flexibility in choosing the most suitable SRAM for specific applications.

In conclusion, the IDT71V632S6PFI is a high-speed