IDT71V65602S133PFG8

Product Overview

Category: Integrated Circuit (IC)
Use: Memory device
Characteristics: High-speed, low-power, synchronous SRAM
Package: 119-Ball Fine-Pitch Ball Grid Array (FBGA)
Essence: Provides high-performance memory storage for various electronic devices
Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

Memory Type: Synchronous Static Random Access Memory (SRAM)
Density: 4 Megabits (256K x 16)
Operating Voltage: 3.3V ± 0.3V
Access Time: 133 MHz
Operating Temperature Range: -40°C to +85°C
Data Retention: Greater than 10 years
Interface: Parallel

Detailed Pin Configuration

The IDT71V65602S133PFG8 has a total of 119 pins. The pin configuration is as follows:

VDDQ
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
DQ8
VSSQ
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
VDDQ
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
VDDQ
/WE
/OE
/CE2
/CE1
/CE0
/UBS
/LDS
/RAS
/CAS
/CS
/CKE
/CLK
VSSQ
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
VDDQ
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
VDDQ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
/ZZ
VSSQ

Functional Features

High-speed operation at 133 MHz
Low-power consumption
Synchronous interface for efficient data transfer
Easy integration into various electronic systems
Reliable and durable memory storage solution

Advantages and Disadvantages

Advantages: - High-speed performance allows for quick data access - Low-power consumption helps in reducing overall energy usage - Synchronous interface enables efficient data transfer - Compact package size for space-constrained applications - Reliable and durable

技術ソリューションにおける IDT71V65602S133PFG8 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of IDT71V65602S133PFG8 in technical solutions:

Question: What is the IDT71V65602S133PFG8?
Answer: The IDT71V65602S133PFG8 is a synchronous SRAM (Static Random Access Memory) chip with a capacity of 4 Megabytes (32 Megabits).
Question: What is the operating voltage range for this SRAM chip?
Answer: The IDT71V65602S133PFG8 operates at a voltage range of 3.0V to 3.6V.
Question: What is the maximum clock frequency supported by this SRAM chip?
Answer: The IDT71V65602S133PFG8 supports a maximum clock frequency of 133 MHz.
Question: Can this SRAM chip be used in battery-powered devices?
Answer: Yes, the IDT71V65602S133PFG8 can be used in battery-powered devices as it operates at low power consumption levels.
Question: What is the access time of this SRAM chip?
Answer: The access time of the IDT71V65602S133PFG8 is 8 ns.
Question: Does this SRAM chip have any built-in error correction capabilities?
Answer: No, the IDT71V65602S133PFG8 does not have built-in error correction capabilities.
Question: Can this SRAM chip be used in industrial temperature environments?
Answer: Yes, the IDT71V65602S133PFG8 is designed to operate in industrial temperature ranges from -40°C to +85°C.
Question: What is the package type of this SRAM chip?
Answer: The IDT71V65602S133PFG8 comes in a 100-pin TQFP (Thin Quad Flat Package).
Question: Can this SRAM chip be used in high-speed data buffering applications?
Answer: Yes, the IDT71V65602S133PFG8 is suitable for high-speed data buffering due to its fast access time and high clock frequency support.
Question: Is this SRAM chip compatible with other standard memory interfaces?
Answer: Yes, the IDT71V65602S133PFG8 is compatible with industry-standard synchronous SRAM interfaces, making it easy to integrate into existing designs.

Please note that these questions and answers are based on general information about the IDT71V65602S133PFG8 and may vary depending on specific application requirements.