IDT71V65602S150PFI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous SRAM
• Package: Plastic Fine-Pitch Ball Grid Array (FBGA)
• Essence: Stores and retrieves digital information in electronic systems
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: Synchronous SRAM
• Density: 4 Megabits (256K x 16)
• Operating Voltage: 3.3V
• Access Time: 15 ns
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Data Retention: 10 years
• Package Dimensions: 54-ball FBGA package

Pin Configuration

The IDT71V65602S150PFI has a total of 54 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDDQ
20. DQ16
21. DQ17
22. DQ18
23. DQ19
24. DQ20
25. DQ21
26. DQ22
27. DQ23
28. VSSQ
29. DQ24
30. DQ25
31. DQ26
32. DQ27
33. DQ28
34. DQ29
35. DQ30
36. DQ31
37. VDDQ
38. A0
39. A1
40. A2
41. A3
42. A4
43. A5
44. A6
45. A7
46. VSSQ
47. A8
48. A9
49. A10
50. A11
51. A12
52. A13
53. A14
54. VDDQ

Functional Features

• High-speed operation for efficient data access
• Low-power consumption for energy efficiency
• Synchronous interface for synchronized data transfer
• Reliable data retention for long-term storage
• Easy integration into electronic systems

Advantages and Disadvantages

Advantages: - High-speed operation allows for quick data access - Low-power consumption helps conserve energy - Synchronous interface ensures synchronized data transfer - Reliable data retention ensures long-term storage of information - Easy integration into electronic systems simplifies the design process

Disadvantages: - Limited memory capacity compared to other memory devices - Higher cost compared to some alternative models - Requires proper handling and static precautions during installation

Working Principles

The IDT71V65602S150PFI operates based on synchronous static random-access memory (SRAM) principles. It stores digital information in a volatile manner, meaning that the stored data is lost when power is removed. The device uses an address bus to select specific memory locations and a data bus to read from or write to those locations. The synchronous nature of the SRAM ensures that data transfers are coordinated with the system clock, allowing for efficient and reliable operation.

Detailed Application Field Plans

The IDT71V65602S150PFI is commonly used in various electronic systems that require high-speed and low-power memory. Some of the application fields where this device finds utility include:

1. Networking equipment
2. Telecommunications devices
3. Industrial automation systems
4. Medical instruments
5. Automotive electronics
6. Consumer electronics

Alternative Models

While the IDT71V65602S150PFI offers specific features and specifications, there are alternative models available in the market that cater to different requirements. Some alternative models to consider include:

1. Micron MT48LC4M32B2P-7: 4 Megabit Synchronous SRAM with a different pin configuration.
2. Cypress CY62157EV30LL-45ZSXI: 4 Megabit Synchronous SRAM with lower power consumption.
3. Samsung K6R4016V1D-UI10: 4 Megabit Synchronous SRAM with a different package type.

These alternative models provide options for customers based on their specific needs and system requirements.

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