IDT71V65603S133PFI8
Product Overview
- Category: Integrated Circuit (IC)
- Use: Memory device
- Characteristics: High-speed, low-power, synchronous SRAM
- Package: 100-pin TQFP (Thin Quad Flat Package)
- Essence: Provides high-performance memory storage for various electronic devices
- Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements
Specifications
- Memory Type: Synchronous Static Random Access Memory (SRAM)
- Density: 4 Megabits (256K x 16)
- Operating Voltage: 3.3V
- Access Time: 133 MHz
- Organization: 256K words x 16 bits
- Interface: Parallel
- Operating Temperature Range: -40°C to +85°C
- Data Retention: Greater than 10 years
Pin Configuration
The IDT71V65603S133PFI8 has a total of 100 pins. The detailed pin configuration is as follows:
- VDDQ
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- VSSQ
- DQ8
- DQ9
- DQ10
- DQ11
- DQ12
- DQ13
- DQ14
- DQ15
- VDDQ
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- VSSQ
- CE2#
- CE1#
- WE#
- OE#
- UB#
- LB#
- CE3#
- CE4#
- CE5#
- CE6#
- CE7#
- CE8#
- CE9#
- CE10#
- CE11#
- CE12#
- CE13#
- CE14#
- CE15#
- CE16#
- CE17#
- CE18#
- CE19#
- CE20#
- CE21#
- CE22#
- CE23#
- CE24#
- CE25#
- CE26#
- CE27#
- CE28#
- CE29#
- CE30#
- CE31#
- CE32#
- CE33#
- CE34#
- CE35#
- CE36#
- CE37#
- CE38#
- CE39#
- CE40#
- CE41#
- CE42#
- CE43#
- CE44#
- CE45#
- CE46#
- CE47#
- CE48#
- CE49#
- CE50#
- CE51#
- CE52#
- CE53#
- CE54#
- CE55#
- VDD
Functional Features
- High-speed operation with a maximum access time of 133 MHz
- Low-power consumption, suitable for battery-powered devices
- Synchronous interface allows for efficient data transfer
- Reliable and durable memory storage with a data retention period of over 10 years
- Easy integration into various electronic systems due to its parallel interface
Advantages
- Fast access time enables quick data retrieval and processing
- Low-power consumption extends battery life in portable devices
- High-density memory capacity meets the requirements of complex applications
- Synchronous interface ensures efficient data transfer and system performance
Disadvantages
- Limited memory capacity compared to other types of memory devices
- Higher cost per bit compared to some alternative memory technologies
- Requires careful handling and proper ESD (Electrostatic Discharge) precautions during installation and usage
Working Principles
The IDT71V65603S133PFI8 is based on synchronous static random access memory (SRAM) technology. It stores data in a volatile manner, meaning that the data is lost when power is removed. The memory cells are organized in a matrix of rows and columns, allowing for fast read and write operations. The synchronous interface ensures synchronized communication between the memory device and the controlling system
技術ソリューションにおける IDT71V65603S133PFI8 の適用に関連する 10 件の一般的な質問と回答をリストします。
Sure! Here are 10 common questions and answers related to the application of IDT71V65603S133PFI8 in technical solutions:
Q: What is IDT71V65603S133PFI8? A: IDT71V65603S133PFI8 is a specific model of synchronous SRAM (Static Random Access Memory) chip manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V65603S133PFI8? A: The IDT71V65603S133PFI8 has a capacity of 4 Megabits (512K x 8 bits).
Q: What is the operating voltage range for IDT71V65603S133PFI8? A: The operating voltage range for IDT71V65603S133PFI8 is typically between 3.0V and 3.6V.
Q: What is the access time of IDT71V65603S133PFI8? A: The access time of IDT71V65603S133PFI8 is 13.5 ns.
Q: What is the package type for IDT71V65603S133PFI8? A: IDT71V65603S133PFI8 comes in a 44-pin Plastic Thin Small Outline Package (TSOP).
Q: Can IDT71V65603S133PFI8 be used in industrial applications? A: Yes, IDT71V65603S133PFI8 is suitable for use in industrial applications due to its wide operating temperature range (-40°C to +85°C).
Q: Does IDT71V65603S133PFI8 support multiple read and write operations simultaneously? A: Yes, IDT71V65603S133PFI8 supports simultaneous read and write operations.
Q: What is the standby current consumption of IDT71V65603S133PFI8? A: The standby current consumption of IDT71V65603S133PFI8 is typically less than 10 µA.
Q: Can IDT71V65603S133PFI8 be used in battery-powered devices? A: Yes, IDT71V65603S133PFI8 can be used in battery-powered devices due to its low power consumption.
Q: Is IDT71V65603S133PFI8 pin-compatible with other SRAM chips? A: No, IDT71V65603S133PFI8 has a specific pin configuration and is not pin-compatible with other SRAM chips.
Please note that these answers are based on general information about IDT71V65603S133PFI8 and may vary depending on specific application requirements.