IDT71V65802S100PFG8
Product Overview
- Category: Integrated Circuit (IC)
- Use: Memory device
- Characteristics: High-speed, low-power, synchronous SRAM
- Package: 100-pin Fine-Pitch Ball Grid Array (FBGA)
- Essence: Provides fast and reliable data storage and retrieval capabilities
- Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements
Specifications
- Memory Type: Synchronous Static Random Access Memory (SRAM)
- Density: 2 Megabits (256K x 8)
- Operating Voltage: 3.3V
- Access Time: 10 ns
- Clock Frequency: 100 MHz
- Operating Temperature Range: -40°C to +85°C
- Data Retention: Greater than 20 years
- Interface: Parallel
Detailed Pin Configuration
The IDT71V65802S100PFG8 has a total of 100 pins. The pin configuration is as follows:
- VDDQ
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- GND
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- A24
- A25
- A26
- A27
- A28
- A29
- A30
- A31
- A32
- A33
- A34
- A35
- A36
- A37
- A38
- A39
- A40
- A41
- A42
- A43
- A44
- A45
- A46
- A47
- A48
- A49
- A50
- A51
- A52
- A53
- A54
- A55
- A56
- A57
- A58
- A59
- A60
- A61
- A62
- A63
- A64
- A65
- A66
- A67
- A68
- A69
- A70
- A71
- A72
- A73
- A74
- A75
- A76
- A77
- A78
- A79
- A80
- A81
- A82
- A83
- A84
- A85
- A86
- A87
- A88
- VDDQ
Functional Features
- High-speed operation with a clock frequency of 100 MHz
- Low-power consumption for energy-efficient applications
- Synchronous interface for easy integration with other components
- Reliable data storage and retrieval capabilities
- Wide operating temperature range for versatile usage scenarios
Advantages and Disadvantages
Advantages: - High-speed operation allows for quick data access - Low-power consumption helps conserve energy - Synchronous interface simplifies system design and integration - Reliable data retention ensures data integrity - Wide operating temperature range enables usage in various environments
Disadvantages: - Limited memory density compared to newer memory technologies - Parallel interface may not be suitable for all applications - Higher cost compared to some alternative memory solutions
Working Principles
The IDT71V65802S100PFG8 is a synchronous SRAM that stores and retrieves data using an array of memory cells. It operates synchronously with an external clock signal, allowing for precise timing and high-speed data access. The memory cells are organized into a 256K x 8 configuration, providing a total memory capacity of 2 Megabits. The device operates at a voltage of 3.3V and has an access time of 10 ns, ensuring fast and efficient data transfer.
技術ソリューションにおける IDT71V65802S100PFG8 の適用に関連する 10 件の一般的な質問と回答をリストします。
Sure! Here are 10 common questions and answers related to the application of IDT71V65802S100PFG8 in technical solutions:
Question: What is the IDT71V65802S100PFG8?
Answer: The IDT71V65802S100PFG8 is a high-speed, low-power CMOS synchronous static RAM (SRAM) with a capacity of 256K x 36 bits.Question: What are the key features of the IDT71V65802S100PFG8?
Answer: Some key features include a synchronous interface, fast access times, low power consumption, and a wide operating voltage range.Question: What is the typical application of the IDT71V65802S100PFG8?
Answer: This SRAM is commonly used in networking equipment, telecommunications systems, industrial automation, and other applications that require high-speed data storage.Question: What is the operating voltage range for the IDT71V65802S100PFG8?
Answer: The operating voltage range is typically between 3.0V and 3.6V.Question: What is the maximum clock frequency supported by this SRAM?
Answer: The IDT71V65802S100PFG8 can support a maximum clock frequency of 100 MHz.Question: Does this SRAM have any power-saving features?
Answer: Yes, it has a deep power-down mode that reduces power consumption when the device is not actively being accessed.Question: Can I use multiple IDT71V65802S100PFG8 devices in parallel to increase memory capacity?
Answer: Yes, you can use multiple devices in parallel to increase the overall memory capacity.Question: What is the data retention time for this SRAM?
Answer: The IDT71V65802S100PFG8 has a data retention time of at least 10 years.Question: Does this SRAM support burst mode operations?
Answer: Yes, it supports burst read and write operations, which can improve overall system performance.Question: Is the IDT71V65802S100PFG8 compatible with other standard memory interfaces?
Answer: Yes, it is designed to be compatible with industry-standard synchronous SRAM interfaces, making it easy to integrate into existing systems.
Please note that these answers are general and may vary depending on specific application requirements and datasheet specifications.