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IPB160N04S3H2ATMA1
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IPB160N04S3H2ATMA1

Introduction

The IPB160N04S3H2ATMA1 is a power MOSFET belonging to the category of electronic components. This device is commonly used in various applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Power switching and amplification in electronic circuits
  • Characteristics: High current-carrying capability, low on-resistance, fast switching speed
  • Package: TO263-7 package
  • Essence: Efficient power management and control
  • Packaging/Quantity: Typically packaged in reels of 2500 units

Specifications

  • Voltage Rating: 40V
  • Current Rating: 160A
  • On-Resistance: 1.6mΩ
  • Gate Charge: 110nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB160N04S3H2ATMA1 follows the standard pin configuration for a TO263-7 package: 1. Gate 2. Drain 3. Source 4. N/C 5. Source 6. Drain 7. Gate

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for efficient power control
  • High current-carrying capability for robust performance

Advantages and Disadvantages

Advantages

  • High current rating
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Sensitive to static discharge
  • Requires careful handling during assembly

Working Principles

The IPB160N04S3H2ATMA1 operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB160N04S3H2ATMA1 finds extensive use in various applications, including: - Switch-mode power supplies - Motor control systems - Electronic load switches - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the IPB160N04S3H2ATMA1 include: - IRF1405PBF - FDP8878 - STP80NF03L

In conclusion, the IPB160N04S3H2ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of electronic applications, making it a popular choice among design engineers and manufacturers.

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技術ソリューションにおける IPB160N04S3H2ATMA1 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum drain-source voltage of IPB160N04S3H2ATMA1?

    • The maximum drain-source voltage of IPB160N04S3H2ATMA1 is 40V.

  2. What is the continuous drain current rating of IPB160N04S3H2ATMA1?

    • The continuous drain current rating of IPB160N04S3H2ATMA1 is 160A.

  3. What is the on-resistance of IPB160N04S3H2ATMA1?

    • The on-resistance of IPB160N04S3H2ATMA1 is typically 1.6mΩ.

  4. Can IPB160N04S3H2ATMA1 be used in automotive applications?

    • Yes, IPB160N04S3H2ATMA1 is suitable for automotive applications.

  5. What is the operating temperature range of IPB160N04S3H2ATMA1?

    • The operating temperature range of IPB160N04S3H2ATMA1 is -55°C to 175°C.

  6. Does IPB160N04S3H2ATMA1 have built-in protection features?

    • Yes, IPB160N04S3H2ATMA1 has built-in overcurrent and thermal protection.

  7. What type of package does IPB160N04S3H2ATMA1 come in?

    • IPB160N04S3H2ATMA1 comes in a TO-263-7 package.

  8. Is IPB160N04S3H2ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB160N04S3H2ATMA1 is suitable for high-frequency switching due to its low on-resistance.

  9. What gate-source voltage is required to fully enhance IPB160N04S3H2ATMA1?

    • A gate-source voltage of 10V is typically required to fully enhance IPB160N04S3H2ATMA1.

  10. Can IPB160N04S3H2ATMA1 be used in power management applications?

    • Yes, IPB160N04S3H2ATMA1 is commonly used in power management solutions due to its high current handling capability and low on-resistance.