IPB64N25S320ATMA1

Introduction

The IPB64N25S320ATMA1 is a power MOSFET belonging to the category of semiconductor devices. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

• Category: Power MOSFET
• Use: The IPB64N25S320ATMA1 is used as a switching device in power electronics applications, such as motor control, power supplies, and inverters.
• Characteristics: This MOSFET features low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The IPB64N25S320ATMA1 is available in a TO-263-7 package, providing efficient thermal dissipation and mechanical robustness.
• Essence: The essence of this MOSFET lies in its ability to handle high currents and voltages while minimizing power losses.
• Packaging/Quantity: It is typically supplied in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Voltage Rating: 250V
• Current Rating: 64A
• On-State Resistance (RDS(on)): 25mΩ
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 175°C
• Package Type: TO-263-7

Detailed Pin Configuration

The IPB64N25S320ATMA1 follows the standard pin configuration for a TO-263-7 package: 1. Source 2. Gate 3. Drain 4. N/C 5. N/C 6. Source 7. Source

Functional Features

• Low On-State Resistance: Enables efficient current conduction with minimal voltage drop.
• High Switching Speed: Facilitates rapid switching transitions, reducing switching losses.
• Low Gate Charge: Allows for precise and responsive control of the MOSFET.

Advantages and Disadvantages

Advantages

• High current and voltage handling capability
• Low power dissipation
• Fast switching speed

Disadvantages

• Sensitivity to overvoltage conditions
• Potential for thermal issues at high currents

Working Principles

The IPB64N25S320ATMA1 operates based on the principle of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can be switched on and off, allowing for efficient power regulation.

Detailed Application Field Plans

The IPB64N25S320ATMA1 finds extensive use in the following application fields: - Motor Control: Used in variable frequency drives and electric vehicle motor controllers. - Power Supplies: Employed in high-power switch-mode power supplies for industrial and consumer electronics. - Inverters: Integral component in DC-AC converters for renewable energy systems and industrial machinery.

Detailed and Complete Alternative Models

• Alternative Model 1: IPB60R099CP
  • Voltage Rating: 650V
  • Current Rating: 60A
  • RDS(on): 99mΩ
• Alternative Model 2: IPP60R190C6
  • Voltage Rating: 600V
  • Current Rating: 24A
  • RDS(on): 190mΩ

In conclusion, the IPB64N25S320ATMA1 serves as a crucial component in modern power electronics, offering high performance and efficiency in various applications.

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