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IPB65R045C7ATMA1
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IPB65R045C7ATMA1

Product Overview

Category

The IPB65R045C7ATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching applications.

Characteristics

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Low on-resistance

Package

The IPB65R045C7ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity

It is usually supplied in reels with a quantity of 800 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 650V
  • Continuous Drain Current (ID): 52A
  • Power Dissipation (PD): 200W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 65mΩ

Detailed Pin Configuration

The IPB65R045C7ATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • Low gate charge allows for efficient switching.
  • High voltage capability enables use in a wide range of applications.
  • Fast switching speed reduces power loss during switching transitions.

Advantages

  • High voltage capability suitable for diverse applications.
  • Low on-resistance minimizes power dissipation.
  • Fast switching speed enhances efficiency.

Disadvantages

  • May require careful consideration of driving circuitry due to its high voltage rating.
  • The TO-263-3 package may not be suitable for all application layouts.

Working Principles

The IPB65R045C7ATMA1 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPB65R045C7ATMA1 is well-suited for use in: - Switched-mode power supplies - Motor drives - Inverters - Solar inverters - Uninterruptible power supplies (UPS)

Detailed and Complete Alternative Models

Some alternative models to the IPB65R045C7ATMA1 include: - IRFB7440PbF - FDPF51N25T - STP80NF55-06

In conclusion, the IPB65R045C7ATMA1 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it an ideal choice for various power management and control applications.

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技術ソリューションにおける IPB65R045C7ATMA1 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum drain-source voltage of IPB65R045C7ATMA1?

    • The maximum drain-source voltage of IPB65R045C7ATMA1 is 650V.

  2. What is the continuous drain current rating of IPB65R045C7ATMA1?

    • The continuous drain current rating of IPB65R045C7ATMA1 is 65A.

  3. What is the on-state resistance of IPB65R045C7ATMA1?

    • The on-state resistance of IPB65R045C7ATMA1 is typically 45mΩ.

  4. What is the gate-source threshold voltage of IPB65R045C7ATMA1?

    • The gate-source threshold voltage of IPB65R045C7ATMA1 is typically 2.5V.

  5. Is IPB65R045C7ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB65R045C7ATMA1 is suitable for high-frequency switching applications due to its low on-state resistance and fast switching characteristics.

  6. What are the typical applications of IPB65R045C7ATMA1?

    • Typical applications of IPB65R045C7ATMA1 include motor control, power supplies, inverters, and industrial automation.

  7. Does IPB65R045C7ATMA1 have built-in protection features?

    • IPB65R045C7ATMA1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.

  8. What is the operating temperature range of IPB65R045C7ATMA1?

    • The operating temperature range of IPB65R045C7ATMA1 is typically -55°C to 175°C.

  9. Can IPB65R045C7ATMA1 be used in automotive applications?

    • Yes, IPB65R045C7ATMA1 is suitable for automotive applications such as electric vehicle powertrains and onboard chargers.

  10. What are the key advantages of using IPB65R045C7ATMA1 in technical solutions?

    • The key advantages of using IPB65R045C7ATMA1 include high voltage capability, low on-state resistance, and suitability for high-power applications.