IPB65R380C6ATMA1

Product Overview

Use

It is used as a high-voltage switching device in various electronic applications.

Characteristics

High voltage capability
Low gate charge
Fast switching speed
Low on-resistance

Package

The IPB65R380C6ATMA1 is typically available in a TO-263-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

Drain-Source Voltage (VDS): 650V
Continuous Drain Current (ID): 6.5A
Power Dissipation (PD): 48W
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 0.38Ω

Detailed Pin Configuration

The IPB65R380C6ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High voltage capability allows for use in various power applications.
Low gate charge enables fast switching, reducing power loss.
Fast switching speed contributes to efficient circuit operation.

Advantages

High voltage capability suitable for diverse applications.
Low on-resistance minimizes power dissipation.
Fast switching speed enhances overall circuit performance.

Disadvantages

May require careful handling due to its high voltage capability.
Sensitive to static electricity, necessitating proper ESD precautions during handling.

Working Principles

The IPB65R380C6ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate conductivity within the device.

Detailed Application Field Plans

This MOSFET is commonly used in: - Switching power supplies - Motor control - LED lighting - Solar inverters - Electric vehicle charging systems

Detailed and Complete Alternative Models

Some alternative models to the IPB65R380C6ATMA1 include: - IPB60R190C6ATMA1 - IPB50R199CP - IPB55R075C7

Note: The above list is not exhaustive and may vary based on specific application requirements.

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