IPB80N06S2H5ATMA2
Product Overview
Category
The IPB80N06S2H5ATMA2 belongs to the category of power MOSFETs.
Use
It is used as a high-performance switching device in various electronic circuits and power applications.
Characteristics
- High current-carrying capability
- Low on-state resistance
- Fast switching speed
- Low gate charge
Package
The IPB80N06S2H5ATMA2 is typically available in a TO-263 package.
Essence
This MOSFET is essential for efficient power management and control in electronic systems.
Packaging/Quantity
It is commonly packaged in reels with quantities varying based on manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 80A
- RDS(ON) (Max) @ VGS = 10V: 8.5mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 90nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB80N06S2H5ATMA2 features a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).
Functional Features
- Low conduction losses
- Enhanced thermal performance
- High power density
- Reliable switching behavior
Advantages and Disadvantages
Advantages
- High current-handling capacity
- Reduced power dissipation
- Improved system efficiency
- Enhanced thermal management
Disadvantages
- Higher cost compared to traditional power transistors
- Sensitivity to electrostatic discharge (ESD)
Working Principles
The IPB80N06S2H5ATMA2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The IPB80N06S2H5ATMA2 finds extensive use in: - Switch-mode power supplies - Motor control systems - Battery management - DC-DC converters - Inverters
Detailed and Complete Alternative Models
- IRFB7434PbF
- FDPF33N25T
- IPP60R190E6
In conclusion, the IPB80N06S2H5ATMA2 power MOSFET offers high-performance characteristics suitable for a wide range of power applications, despite its higher cost and ESD sensitivity. Its efficient power management capabilities make it an integral component in modern electronic systems.
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技術ソリューションにおける IPB80N06S2H5ATMA2 の適用に関連する 10 件の一般的な質問と回答をリストします。
Sure, here are 10 common questions and answers related to the application of IPB80N06S2H5ATMA2 in technical solutions:
What is the maximum drain current of IPB80N06S2H5ATMA2?
- The maximum drain current of IPB80N06S2H5ATMA2 is 80A.
What is the maximum drain-source voltage rating of IPB80N06S2H5ATMA2?
- The maximum drain-source voltage rating of IPB80N06S2H5ATMA2 is 60V.
What is the on-resistance of IPB80N06S2H5ATMA2?
- The on-resistance of IPB80N06S2H5ATMA2 is typically 8mΩ at Vgs=10V.
What is the gate threshold voltage of IPB80N06S2H5ATMA2?
- The gate threshold voltage of IPB80N06S2H5ATMA2 is typically 2V.
Can IPB80N06S2H5ATMA2 be used for high-frequency switching applications?
- Yes, IPB80N06S2H5ATMA2 can be used for high-frequency switching applications due to its low on-resistance and fast switching characteristics.
Is IPB80N06S2H5ATMA2 suitable for automotive applications?
- Yes, IPB80N06S2H5ATMA2 is designed for automotive applications and meets the necessary quality and reliability standards.
What is the thermal resistance of IPB80N06S2H5ATMA2?
- The thermal resistance of IPB80N06S2H5ATMA2 is typically 1.1°C/W.
Does IPB80N06S2H5ATMA2 have built-in ESD protection?
- Yes, IPB80N06S2H5ATMA2 has built-in ESD protection, making it more robust in handling electrostatic discharge events.
What package type does IPB80N06S2H5ATMA2 come in?
- IPB80N06S2H5ATMA2 comes in a TO-263-3 package.
Can IPB80N06S2H5ATMA2 be used in parallel to increase current handling capability?
- Yes, IPB80N06S2H5ATMA2 can be used in parallel to increase current handling capability in high-power applications.
I hope these answers provide the information you were looking for! If you have any more questions, feel free to ask.