Infineon Technologies
画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
IPD30N08S2L21ATMA1
詳細を表示 DataSheets

IPD30N08S2L21ATMA1

Product Overview

Category

The IPD30N08S2L21ATMA1 belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPD30N08S2L21ATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is essential for efficient power management in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 80V
  • Continuous Drain Current (ID): 30A
  • On-Resistance (RDS(on)): 0.030 ohms
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 38nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD30N08S2L21ATMA1 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

  • High voltage capability allows for use in a wide range of applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid response in switching applications.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Sensitivity to static electricity
  • Gate drive requirements may be more critical compared to other MOSFETs

Working Principles

The IPD30N08S2L21ATMA1 operates based on the principles of field-effect transistors, where the control of current flow between the drain and source terminals is achieved through the application of a voltage to the gate terminal.

Detailed Application Field Plans

The IPD30N08S2L21ATMA1 is widely used in: - Power supplies - Motor control - LED lighting - Audio amplifiers - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IPD30N08S2L21ATMA1 include: - IRF3205 - FDP8878 - STP55NF06L

In conclusion, the IPD30N08S2L21ATMA1 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for various electronic applications.

[Word count: 398]

技術ソリューションにおける IPD30N08S2L21ATMA1 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum drain-source voltage of IPD30N08S2L21ATMA1?

    • The maximum drain-source voltage is 80V.

  2. What is the continuous drain current rating of IPD30N08S2L21ATMA1?

    • The continuous drain current rating is 30A.

  3. What is the on-resistance of IPD30N08S2L21ATMA1?

    • The on-resistance is typically 0.008 ohms.

  4. Can IPD30N08S2L21ATMA1 be used in automotive applications?

    • Yes, it is designed for automotive applications.

  5. What is the operating temperature range of IPD30N08S2L21ATMA1?

    • The operating temperature range is -55°C to 175°C.

  6. Does IPD30N08S2L21ATMA1 have built-in ESD protection?

    • Yes, it has built-in ESD protection.

  7. Is IPD30N08S2L21ATMA1 suitable for high-frequency switching applications?

    • Yes, it is suitable for high-frequency switching applications.

  8. What is the gate threshold voltage of IPD30N08S2L21ATMA1?

    • The gate threshold voltage is typically 2.5V.

  9. Does IPD30N08S2L21ATMA1 require a heat sink for proper operation?

    • It is recommended to use a heat sink for high-power applications.

  10. Is IPD30N08S2L21ATMA1 RoHS compliant?

    • Yes, it is RoHS compliant.