画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
IPS090N03LGBKMA1

IPS090N03LGBKMA1

Product Overview

Category

The IPS090N03LGBKMA1 belongs to the category of power MOSFETs.

Use

It is used as a switching device in various electronic circuits and applications.

Characteristics

  • Low on-state resistance
  • High current capability
  • Fast switching speed
  • Low gate charge
  • Low thermal resistance

Package

The IPS090N03LGBKMA1 is typically available in a TO-220 package.

Essence

This MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 90A
  • On-State Resistance (RDS(on)): 9mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 38nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPS090N03LGBKMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High current handling capability
  • Low on-state resistance for minimal power dissipation
  • Fast switching speed for improved efficiency
  • Robust construction for reliability in demanding applications

Advantages

  • Efficient power management
  • Suitable for high-current applications
  • Low power dissipation
  • Reliable performance

Disadvantages

  • May require careful consideration of heat dissipation in high-power applications
  • Sensitivity to static discharge

Working Principles

The IPS090N03LGBKMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IPS090N03LGBKMA1 is commonly used in the following applications: - Power supplies - Motor control - DC-DC converters - Inverters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the IPS090N03LGBKMA1 include: - IRF3205 - FDP8870 - STP80NF03L

In conclusion, the IPS090N03LGBKMA1 is a versatile power MOSFET with high current capability, low on-state resistance, and fast switching speed, making it suitable for a wide range of power management applications.

[Word count: 345]

技術ソリューションにおける IPS090N03LGBKMA1 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is IPS090N03LGBKMA1?

    • IPS090N03LGBKMA1 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in various technical solutions requiring high efficiency and low power dissipation.
  2. What are the key specifications of IPS090N03LGBKMA1?

    • The key specifications include a drain-source voltage of 30V, continuous drain current of 90A, low on-resistance, and a small form factor package.
  3. In what technical solutions can IPS090N03LGBKMA1 be used?

    • IPS090N03LGBKMA1 can be used in applications such as motor control, power supplies, battery management systems, and DC-DC converters.
  4. What are the advantages of using IPS090N03LGBKMA1 in technical solutions?

    • The advantages include high efficiency, low power dissipation, fast switching speed, and reliable performance in demanding environments.
  5. How does IPS090N03LGBKMA1 contribute to energy efficiency in technical solutions?

    • IPS090N03LGBKMA1's low on-resistance and high current-carrying capability help minimize power losses and improve overall energy efficiency in the system.
  6. Are there any thermal considerations when using IPS090N03LGBKMA1?

    • Yes, proper thermal management is important to ensure that the MOSFET operates within its temperature limits for optimal performance and reliability.
  7. Can IPS090N03LGBKMA1 be used in automotive applications?

    • Yes, IPS090N03LGBKMA1 is suitable for automotive applications where high current handling and efficient power management are required.
  8. What protection features does IPS090N03LGBKMA1 offer?

    • IPS090N03LGBKMA1 provides built-in protection against overcurrent, overtemperature, and short-circuit conditions, enhancing the safety and robustness of the system.
  9. Does IPS090N03LGBKMA1 require any specific gate driving considerations?

    • Proper gate driving techniques, including voltage and current waveforms, should be followed to ensure reliable and efficient operation of IPS090N03LGBKMA1.
  10. Where can I find detailed application notes and reference designs for IPS090N03LGBKMA1?

    • Detailed application notes and reference designs for IPS090N03LGBKMA1 can be found on the manufacturer's website or through their technical support resources.