IRFBL3315

Product Overview

Use

It is commonly used for high-power switching applications in various electronic circuits.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge

Package

The IRFBL3315 is typically available in a TO-220AB package.

Essence

This MOSFET is essential for controlling high-power loads in electronic systems.

Packaging/Quantity

It is usually packaged individually and sold in quantities suitable for production or prototyping needs.

Specifications

Drain-Source Voltage (VDS): 150V
Continuous Drain Current (ID): 52A
RDS(ON) (Max) @ VGS = 10V: 0.035Ω
Gate-Source Voltage (VGS) ±20V
Total Power Dissipation (PD): 200W

Detailed Pin Configuration

Gate (G)
Drain (D)
Source (S)

Functional Features

High voltage capability allows for use in various power applications.
Low on-resistance minimizes power loss and heat generation.
Fast switching speed enables efficient control of power flow.
Low gate charge facilitates quick and precise switching.

Advantages

Suitable for high-power applications
Efficient power management
Fast response time

Disadvantages

May require additional circuitry for driving the gate
Sensitivity to static electricity

Working Principles

The IRFBL3315 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently switch high currents with minimal power loss.

Detailed Application Field Plans

The IRFBL3315 finds extensive use in: - Switching power supplies - Motor control circuits - Inverters - Electronic load switches

Detailed and Complete Alternative Models

IRFBL3316
IRFBL3317
IRFBL3318

In conclusion, the IRFBL3315 is a versatile power MOSFET with high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of high-power switching applications.

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